BSP 170
SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Avalanche rated
• VGS(th) = -2.1...-4.0 V
Pi...
BSP 170
SIPMOS ® Small-Signal
Transistor P channel Enhancement mode Avalanche rated
VGS(th) = -2.1...-4.0 V
Pin 1 G Pin 2 D Pin 3 S Pin 4 D
Type BSP 170 Type BSP 170
VDS
-60 V
ID
-1.7 A
RDS(on)
0.35 Ω
Package SOT-223
Marking
Ordering Code Q67000-S . . .
Tape and Reel Information E6327
Maximum Ratings Parameter Continuous drain current Symbol Values -1.7 Unit A
ID IDpuls
-6.8
TA = 25 °C
DC drain current, pulsed
TA = 25 °C
Avalanche energy, single pulse
EAS
8
mJ
ID = -1.7 A, VDD = -25 V, RGS = 25 Ω L = 3.23 mH, Tj = 25 °C
Gate source voltage Power dissipation
VGS Ptot
± 20 1.8
V W
TA = 25 °C
Semiconductor Group
1
22/05/1997
BSP 170
Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) Thermal resistance, junction-soldering point 1) IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 ≤ 70 ≤ 10 55 / 150 / 56 K/W Unit °C
Tj Tstg RthJA RthJS
1)
Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
-60 -3 -0.1 -10 -10 0.255 -4
V
VGS = 0 V, ID = -0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
-2.1
VGS=VDS, ID = -1 mA
Zero gate voltage drain current
IDSS
-1 -100
µA
VDS = -60 V, VGS = 0 V, Tj = 25 °C VDS = -60 V, VGS = 0 V, Tj = 125 °C
Ga...