BSP135

BSP135 SIPMOS® Small-Signal-Transistor Features N-channel Depletion mode dv /dt rated Product Summary V DS R DS(on),max I DSS,min 600 60 0.02 V Ω A SOT-223 Type BSP135 Package SOT-223 Ordering Code Q62702-S655 Tape and Reel Information E6327: 1000 pcs/reel Marking BSP135 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T A=25 °C T A=70 °C Pulsed drain current I D,pulse T A=25 °C I D=0.12 A, V DS=20 V, di /dt =200 A/µs, T j,max=150 °C Value 0.12 0.10 0.48 Unit A Reverse diode dv /dt dv /dt 6 kV/µs Gate source voltage ESD sensitivity (HBM) as per MIL-STD 883 Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 V GS ±20 Class 1 V P tot T j, T stg T A=25 °C 1.8 -55 ... 150 55/150/56 W °C Rev. 1.0 page 1 2003-04-03 BSP135 Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - soldering point (pin 4) SMD version, device on PCB R thJS R thJA minimal footprint 6 cm2 cooling area1) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source cutoff current V (BR)DSS V GS=-3 V, I D=250 µA V GS(th) I D(off) V DS=3 V, I D=94 µA V DS=600 V, V GS=-3 V, T j=25 °C V DS=600 V, V GS=-3 V, T j=125 °C Gate-source leakage current On-state drain current Drain-source on-state resistance I GSS I DSS R DS(on) V GS=20 V, V DS=0 V V GS=0 V, V DS...