DISCRETE SEMICONDUCTORS
DATA SHEET
BSP121 N-channel enhancement mode vertical D-MOS transistor
Product specification Su...
DISCRETE SEMICONDUCTORS
DATA SHEET
BSP121 N-channel enhancement mode vertical D-MOS
transistor
Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC13b 1998 Apr 01
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS
transistor
DESCRIPTION N-channel enhancement mode vertical D-MOS
transistor in a miniature SOT223 envelope and designed for use as a line current interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers. FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown PINNING - SOT223 1 = gate 2 = drain 3 = source 4 = drain Marking code BSP121 Transfer admittance ID = 400 mA; VDS = 25 V Yfs min. typ. QUICK REFERENCE DATA Drain source voltage Gate-source voltage (open drain) Drain current (DC) Total power dissipation up to Tamb = 25 °C Drain-source on-resistance ID = 400 mA; VGS = 10 V RDS(on) typ. max. Ptot max. VDS ±VGSO ID max. max. max.
BSP121
200 V 20 V 350 mA 1.5 W 4.5 Ω 6.0 Ω 200 mS 350 mS
PIN CONFIGURATION
handbook, halfpage
4
d
g
1 Top view
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3
MAM054
s
Fig.1 Simplified outline and symbol.
1998 Apr 01
2
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS
transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Drain current (peak) Total power dissipa...