DISCRETE SEMICONDUCTORS
DATA SHEET
BSP120 N-channel enhancement mode vertical D-MOS transistor
Product specification Fi...
DISCRETE SEMICONDUCTORS
DATA SHEET
BSP120 N-channel enhancement mode vertical D-MOS
transistor
Product specification File under Discrete Semiconductors, SC13b April 1995
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS
transistor
DESCRIPTION N-channel enhancement mode vertical D-MOS
transistor in a miniature SOT223 envelope and designed for use as a line current interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers. FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown QUICK REFERENCE DATA Drain-source voltage Drain-current (DC) Drain-source ON-resistance ID = 250 mA; VGS = 10 V Gate threshold voltage PINNING - SOT223 1 = gate 2 = drain 3 = source 4 = drain Marking code BSP120 PIN CONFIGURATION RDS(on) VGS(th) typ. max. max. VDS ID max. max.
BSP120
200 V 250 mA 7 Ω 12 Ω 2.8 V
handbook, halfpage
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1 Top view
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Fig.1 Simplified outline and symbol.
April 1995
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Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS
transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Drain current (peak) Total power dissipation up to Tamb = 25 °C (note 1) Storage temperature range Junction temperature THERMAL RESISTANCE From junction to ambient (note 1) Note Rth j-a = VDS ±VGSO ID IDM Ptot Tstg Tj ...