BSP107

DISCRETE SEMICONDUCTORS DATA SHEET BSP107 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES Direct interface to C-MOS, TTL, etc. due to low threshold voltage High-speed switching No secondary breakdown. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope. Intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer driver switching. PINNING - SOT223 PIN 1 2 3 4 gate drain source drain Fig.1 Simplified outline and symbol. DESCRIPTION 1 Top view 2 3 MAM054 BSP107 QUICK REFERENCE DATA SYMBOL VDS VGS(th) ID RDS(on) PARAMETER drain-source voltage (DC) gate-source threshold voltage drain current (DC) drain-source on-state resistance MAX. 200 2.4 200 28 V V mA Ω UNIT handbook, halfpage 4 d g s April 1995 2 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS ±VGSO ID IDM Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage drain current drain current total power dissipation storage temperature range operating junction temperature open drain DC peak up to Tamb = 25 °C CONDITIONS MIN. − − − − − −65 − MAX. 200 20 200 350 1...