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BSM100GB120DN2K

Siemens Semiconductor Group
Part Number BSM100GB120DN2K
Manufacturer Siemens Semiconductor Group
Description IGBT
Published Mar 23, 2005
Detailed Description BSM 100 GB 120 DN2K IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated met...
Datasheet PDF File BSM100GB120DN2K PDF File

BSM100GB120DN2K
BSM100GB120DN2K

Overview
BSM 100 GB 120 DN2K IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type BSM 100 GB 120 DN2K Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage VCE IC Package HALF-BRIDGE 1 Ordering Code C67070-A2107-A70 1200V 145A Symbol Values 1200 1200 Unit V VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 145 100 TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms ICpuls 290 200 TC = 25 °C TC = 80 °C Power dissipation per IGBT Ptot 700 W + 150 -55 .
.
.
+ 150 ≤ 0.
18 ≤ 0.
36 2500 20 11 F 55 / 150 / 56 Vac mm K/W °C TC = 25 °C Chip temperature Storage temperature Therm...


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