IGBT
BSM 100 GAL 120 DN2
IGBT Power Module
• Single switch with chopper diode • Including fast free-wheeling diodes • Packa...
Description
BSM 100 GAL 120 DN2
IGBT Power Module
Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plate
Type BSM 100 GAL 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage
VCE
IC
Package
Ordering Code
1200V 150A
HALF BRIDGE GAL 2 C67076-A2012-A70
Symbol
Values 1200 1200
Unit V
VCE VCGR VGE IC
RGE = 20 kΩ
Gate-emitter voltage DC collector current
± 20 A 150 100
TC = 25 °C TC = 80 °C
Pulsed collector current, tp = 1 ms
ICpuls
300 200
TC = 25 °C TC = 80 °C
Power dissipation per IGBT
Ptot
800
W + 150 -55 ... + 150 ≤ 0.16 ≤ 0.3 ≤ 0.25 2500 20 11 F 55 / 150 / 56 Vac mm K/W °C
TC = 25 °C
Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Diode thermal resistance, chip-case,chopper Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Tj Tstg RthJC RthJCD RTHJCDC Vis
-
Semiconductor Group
1
Mar-29-1996
BSM 100 GAL 120 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.5 5.5 3.1 2.5 1.5 6 6.5 3.7 3
V
VGE = VCE, IC = 4 mA
Collector-emitter saturation voltage
VCE(sat)
-
VGE = 15 V, IC = 100 A, Tj = 25 °C VGE = 15 V, IC = 100 A, Tj = 125 °C
Zero gate voltage collector current
ICES
2 -
mA
VCE = 1200 V, VGE = 0 V, Tj = 25 °C V...
Similar Datasheet
- BSM100GAL120DN2 IGBT - Siemens Semiconductor Group