BSL211SP

Preliminary data BSL211SP OptiMOS-P Small-Signal-Transistor Feature P-Channel Enhancement mode Super Logic Level (2.5 V rated) 150°C operating temperature Avalanche rated dv/dt rated Product Summary VDS RDS(on) ID -20 67 -4.7 P-TSOP6-6 V mΩ A 4 5 6 3 2 1 Type BSL211SP Package P-TSOP6-6 Ordering Code Q67042-S4063 Marking sPB Gate pin 3 Drain pin 1,2, 5,6 Source pin 4 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TA=25°C TA=70°C Symbol ID Value -4.7 -3.8 Unit A Pulsed drain current TA=25°C ID puls EAS dv/dt VGS Ptot Tj , Tstg -18.8 26 -6 ±12 2 -55... +150 55/150/56 mJ kV/µs V W °C Avalanche energy, single pulse ID =-4.7 A , VDD =-10V, RGS =25Ω Reverse diode dv/dt IS =-4.7A, VDS =-16V, di/dt=200A/µs, Tjmax =150°C Gate source voltage Power dissipation TA=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2001-12-06 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) BSL211SP Symbol min. RthJS RthJA - Values typ. max. 50 230 62.5 Unit K/W Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0V, ID =-250µA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) -20 -0.6 Values typ. -0.9 max. -1.2 Unit V Gate threshold voltage, VGS = VDS ID =-...