Rev. 2.0
BSL207SP
OptiMOS-P Small-Signal-Transistor
Feature • P-Channel • Enhancement mode • Super Logic Level (2.5 V...
Rev. 2.0
BSL207SP
OptiMOS-P Small-Signal-
Transistor
Feature P-Channel Enhancement mode Super Logic Level (2.5 V rated) 150°C operating temperature Avalanche rated dv/dt rated
Product Summary VDS RDS(on) ID -20 41 -6
P-TSOP6-6
V mΩ A
4
5 6
3 2 1
Type
BSL207SP
Package
P-TSOP6-6
Ordering Code
Q67042-S4066
Marking
sPA
Gate pin 3
Drain pin 1,2, 5,6 Source pin 4
Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter
Continuous drain current
TA=25°C TA=70°C
Symbol
ID
Value
-6 -4.8
Unit
A
Pulsed drain current
TA=25°C
ID puls
EAS
dv/dt
VGS
Ptot
Tj , Tstg
-24
44
-6
±12
2
-55... +150
55/150/56
Avalanche energy, single pulse
ID =-6 A , VDD=-10V, RGS =25Ω
mJ
kV/µs
V
W
°C
Reverse diode dv/dt
IS =-6A, VDS=-16V, di/dt=200A/µs, Tjmax =150°C
Gate source voltage
Power dissipation
TA=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Page 1
2004-02-02
Rev. 2.0 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point SMD version, device on PCB:
@ min. footprint @ 6 cm 2 cooling area
1)
BSL207SP
Symbol min. RthJS RthJA -
Values typ. max. 50 230 62.5
Unit
K/W
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage
VGS =0, ID=-250µA
Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) -20 -0.6
Values typ. -0.9 max. -1.2
Unit
V
Gate threshold voltage, VGS = VDS
ID =-40µA
Zero gate voltage drain...