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BSH105

NXP

N-channel enhancement mode MOS transistor


Description
Philips Semiconductors Product specification N-channel enhancement mode MOS transistor FEATURES Very low threshold voltage Fast switching Logic level compatible Subminiature surface mount package BSH105 SYMBOL d QUICK REFERENCE DATA VDS = 20 V ID = 1.05 A g RDS(ON) ≤ 250 mΩ (VGS = 2.5 V) VGS(TO) ≥ 0.4 V s GENERAL DESCRIPTION N-channel, enhance...



NXP

BSH105

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