Very Low Power/Voltage CMOS SRAM 512K X 8 bit
BSI
FEATURES
Very Low Power/Voltage CMOS SRAM 512K X 8 bit
GENERAL DESCRIPTION
BS62LV4000
• Wide Vcc operation vo...
Description
BSI
FEATURES
Very Low Power/Voltage CMOS SRAM 512K X 8 bit
GENERAL DESCRIPTION
BS62LV4000
Wide Vcc operation voltage : 2.7V ~ 3.6V Very low power consumption : Vcc = 3.0V C-grade: 20mA (Max.) operating current I -grade: 25mA (Max.) operating current 0.5uA (Typ.) CMOS standby current High speed access time : -70 70ns (Max) at Vcc = 3.0V -10 100ns (Max) at Vcc = 3.0V Automatic power down when chip is deselected Three state outputs and TTL compatible Fully static operation Data retention supply voltage as low as 1.5V Easy expansion with CE and OE options
The BS62LV4000 is a high performance, very low power CMOS Static Random Access Memory organized as 524,288 words by 8 bits and operates from a wide range of 2.7V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.5uA and maximum access time of 70ns in 3V operation. Easy memory expansion is provided by an active LOW chip enable (CE), and active LOW output enable (OE) and three-state output drivers. The BS62LV4000 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS62LV4000 is available in the JEDEC standard 32 pin , 8mmx13.4mm STSOP, and 8mmx20mm TSOP.
PRODUCT FAMILY
SPEED ( ns )
Vcc=3.0V
PRODUCT FAMILY BS62LV4000TC BS62LV4000STC BS62LV4000TI BS62LV4000STI
OPERATING TEMPERATURE +0 O C to +70O C -40 O C to +85O C
Vcc RANGE 2.7V ~ 3.6V...
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