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MT44K32M36

Micron

2 Meg x 36 x 16 Banks RLDRAM-3

1.125Gb: x18, x36 RLDRAM 3 Features RLDRAM 3 MT44K64M18 – 4 Meg x 18 x 16 Banks MT44K32M36 – 2 Meg x 36 x 16 Banks Fea...


Micron

MT44K32M36

File Download Download MT44K32M36 Datasheet


Description
1.125Gb: x18, x36 RLDRAM 3 Features RLDRAM 3 MT44K64M18 – 4 Meg x 18 x 16 Banks MT44K32M36 – 2 Meg x 36 x 16 Banks Features 1200 MHz DDR operation (2400 Mb/s/ball data rate) 86.4Gb/s peak bandwidth (x36 at 1200 MHz clock frequency) Organization – 64 Meg x 18, and 32 Meg x 36 common I/O (CIO) – 16 banks 1.2V center-terminated push/pull I/O 2.5V VEXT, 1.35V VDD, 1.2V VDDQ (optional 1.35V VDDQ for 2400 operation only). Reduced cycle time (tRC (MIN) = 6.67 - 8ns) SDR addressing Programmable READ/WRITE latency (RL/WL) and burst length Data mask for WRITE commands Differential input clocks (CK, CK#) Free-running differential input data clocks (DKx, DKx#) and output data clocks (QKx, QKx#) On-die DLL generates CK edge-aligned data and differential output data clock signals 64ms refresh (128K refresh per 64ms) 168-ball BGA package Ω or 60Ω matched impedance outputs Integrated on-die termination (ODT) Single o...




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