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GA100SICP12-227 Dataheets PDF



Part Number GA100SICP12-227
Manufacturers GeneSiC
Logo GeneSiC
Description Silicon Carbide Junction Transistor/Schottky Diode Co-pack
Datasheet GA100SICP12-227 DatasheetGA100SICP12-227 Datasheet (PDF)

GA100SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack Features • 175 °C Maximum Operating Temperature • Gate Oxide Free SiC Switch • Optional Gate Return Pin • Exceptional Safe Operating Area • Integrated SiC Schottky Rectifier • Excellent Gain Linearity • Temperature Independent Switching Performance • Low Output Capacitance • Positive Temperature Coefficient of RDS,ON • Suitable for Connecting an Anti-parallel Diode Advantages • Compatible with Si MOSFET/IGBT Gate Drive I.

  GA100SICP12-227   GA100SICP12-227


SMG1 GA100SICP12-227 T1650H


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