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K7N321801M

Samsung semiconductor

1M x 36 & 2M x 18 Pipelined NtRAM

K7N323601M K7N321801M Preliminary 1Mx36 & 2Mx18 Pipelined NtRAMTM Document Title 1Mx36 & 2Mx18-Bit Pipelined NtRAMTM ...


Samsung semiconductor

K7N321801M

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K7N323601M K7N321801M Preliminary 1Mx36 & 2Mx18 Pipelined NtRAMTM Document Title 1Mx36 & 2Mx18-Bit Pipelined NtRAMTM Revision History Rev. No. History 0.0 1. Initial document. 0.1 1. Add 165FBGA package 0.2 1. Update JTAG scan order 2. Speed bin merge. From K7N3236(18)09M to K7N3236(18)01M 3. AC parameter change. tOH(min)/tLZC(min) from 0.8 to 1.5 at -25 tOH(min)/tLZC(min) from 1.0 to 1.5 at -22 tOH(min)/tLZC(min) from 1.0 to 1.5 at -20 Draft Date May. 10. 2001 Aug. 29. 2001 Dec. 31. 2001 Remark Preliminary Preliminary Preliminary The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. - 1 - Dec. 2001 Rev 0.2 K7N323601M K7N321801M Preliminary 1Mx36 & 2Mx18 Pi...




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