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BY359F-1500 Dataheets PDF



Part Number BY359F-1500
Manufacturers NXP
Logo NXP
Description Damper diode fast/ high-voltage
Datasheet BY359F-1500 DatasheetBY359F-1500 Datasheet (PDF)

Philips Semiconductors Preliminary specification Damper diode fast, high-voltage FEATURES • Low forward volt drop • Fast switching • Soft recovery characteristic • High thermal cycling performance • Isolated mounting tab BY359F-1500, BY359F-1500S SYMBOL QUICK REFERENCE DATA VR = 1500 V VF ≤ 1.8 V / 2 V IF(RMS) = 15.7 A IFSM ≤ 60 A trr ≤ 600 ns / 350 ns k 1 a 2 GENERAL DESCRIPTION Glass-passivated double diffused rectifier diode featuring low forward voltage drop, fast reverse recovery an.

  BY359F-1500   BY359F-1500


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Philips Semiconductors Preliminary specification Damper diode fast, high-voltage FEATURES • Low forward volt drop • Fast switching • Soft recovery characteristic • High thermal cycling performance • Isolated mounting tab BY359F-1500, BY359F-1500S SYMBOL QUICK REFERENCE DATA VR = 1500 V VF ≤ 1.8 V / 2 V IF(RMS) = 15.7 A IFSM ≤ 60 A trr ≤ 600 ns / 350 ns k 1 a 2 GENERAL DESCRIPTION Glass-passivated double diffused rectifier diode featuring low forward voltage drop, fast reverse recovery and soft recovery characteristic. The device is intended for use in TV receivers and PC monitors. The BY359F series is supplied in the conventional leaded SOD100 package. PINNING PIN 1 2 tab DESCRIPTION cathode anode isolated SOD100 case 1 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRSM VRRM VRWM IF(peak) IF(RMS) IFRM IFSM PARAMETER Peak non-repetitive reverse voltage Peak repetitive reverse voltage Crest working reverse voltage Peak forward current RMS forward current Peak repetitive forward current Peak non-repetitive forward current Storage temperature Operating junction temperature CONDITIONS MIN. -40 MAX. 1500 1500 1300 10 7 15.7 60 60 66 150 150 UNIT V V V A A A A A A ˚C ˚C 16-32kHz TV 31-70kHz monitor BY359F-1500 BY359F-1500S Tstg Tj sinusoidal; a = 1.57 t = 10 ms t = 8.3 ms sinusoidal; Tj = 150 ˚C prior to surge; with reapplied VRWM(max) THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS with heatsink compound without heatsink compound in free air. MIN. TYP. 55 MAX. 4.8 5.9 UNIT K/W K/W K/W September 1998 1 Rev 1.300 Philips Semiconductors Preliminary specification Damper diode fast, high-voltage STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated BY359F-1500, BY359F-1500S BY359F-1500 SYMBOL VF IR PARAMETER Forward voltage Reverse current CONDITIONS IF = 20 A IF = 10 A; Tj = 150˚C VR = 1300 V VR = 1300 V; Tj = 100 ˚C TYP. 1.3 1.00 10 50 MAX. 1.8 1.5 100 300 BY359F-1500S TYP. 1.5 1.25 10 100 MAX. 2.0 1.75 100 600 UNIT V V µA µA DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated BY359F-1500 SYMBOL trr Qs Vfr PARAMETER Reverse recovery time Reverse recovery charge Peak forward recovery voltage CONDITIONS IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs IF = 10 A; dIF/dt = 30 A/µs TYP. 0.47 1.6 11.0 MAX. 0.60 2.0 BY359F-1500S TYP. 0.28 0.70 17.0 MAX. 0.35 0.95 UNIT µs µC V I dI F dt I F F trr time time VF Qs 25% 100% V VF time I fr R I rrm Fig.1. Definition of trr, Qs and Irrm Fig.2. Definition of Vfr September 1998 2 Rev 1.300 Philips Semiconductors Preliminary specification Damper diode fast, high-voltage BY359F-1500, BY359F-1500S 80 70 IFS(RMS) / A BY359 IF / A 30 Tj=150C BY359 IFSM 60 50 40 30 10 20 Tj=25C typ 20 10 0 1ms 10ms 0.1s tp / s 1s 10s 0 0 1.0 VF / V 2.0 max Fig.3. Maximum non-repetitive rms forward current. IF = f(tp); sinusoidal current waveform; Tj = 150˚C prior to surge with reapplied VRWM. Fig.5. BY359F-1500 forward characteristic IF = f(VF); parameter Tj IF / A BY359S 10 Transient thermal impedance, Zth j-hs (K/W) 30 Tj=150C Tj=25C 1 20 0.1 10 typ 0.01 P D tp D= t T p max 0 0 1.0 VF / V 2.0 0.001 1us T t 10us 100us 1ms 10ms 100ms 1s pulse width, tp (s) BY359F 10s Fig.4. Transient thermal impedance Zth = f(tp) Fig.6. BY359F-1500S forward characteristic IF = f(VF); parameter Tj September 1998 3 Rev 1.300 Philips Semiconductors Preliminary specification Damper diode fast, high-voltage MECHANICAL DATA Dimensions in mm Net Mass: 2 g BY359F-1500, BY359F-1500S 10.2 max 5.7 max 3.2 3.0 0.9 0.5 4.4 max 2.9 max 4.4 4.0 7.9 7.5 17 max seating plane 3.5 max not tinned 4.4 13.5 min k 0.4 M a 0.9 0.7 0.55 max 1.3 5.08 top view Fig.7. SOD100; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". September 1998 4 Rev 1.300 Philips Semiconductors Preliminary specification Damper diode fast, high-voltage DEFINITIONS Data sheet status Objective specification Product specification Limiting values BY359F-1500, BY359F-1500S This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given.


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