BY278

DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BY278 Damper diode Product specification 1996 Sep 26 Philips Semiconductors Product specification Damper diode FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability Available in ammo-pack Also available with preformed leads for easy insertion. APPLICATIONS Damper diode in high frequency horizontal deflection circuits up to 16 kHz. DESCRIPTION Rugged glass package, using a high temperature alloyed construction. BY278 This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. 2/3 page k (Datasheet) Fig.1 Simplified outline (SOD64) and symbol.  , a MAM104 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRSM VRRM VR IFWM IFRM IFSM PARAMETER non-repetitive peak reverse voltage repetitive peak reverse voltage continuous reverse voltage working peak forward current repetitive peak forward current non-repetitive peak forward current t = 10 ms half sinewave; Tj = Tj max prior to surge; VR = VRRMmax Tamb = 75 °C; PCB mounting (see Fig.4); see Fig.2 CONDITIONS MIN. − − − − − − MAX. 1700 1700 1650 5 10 50 V V V A A A UNIT Tstg Tj storage temperature junction temperature −65 −65 +175 +150 °C °C ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL VF IR trr tfr PARAMETER forward voltage reverse current reverse recovery time forward recover...