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BY229-200 Dataheets PDF



Part Number BY229-200
Manufacturers NXP
Logo NXP
Description Rectifier diodes
Datasheet BY229-200 DatasheetBY229-200 Datasheet (PDF)

Philips Semiconductors Product specification Rectifier diodes fast, soft-recovery FEATURES • Low forward volt drop • Fast switching • Soft recovery characteristic • High thermal cycling performance • Low thermal resistance BY229 series SYMBOL QUICK REFERENCE DATA VR = 200 V/ 400 V/ 600 V/800 V IF(AV) = 8 A IFSM ≤ 60 A trr ≤ 135 ns k 1 a 2 GENERAL DESCRIPTION Glass-passivated double diffused rectifier diodes featuring low forward voltage drop, fast reverse recovery and soft recovery chara.

  BY229-200   BY229-200


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Philips Semiconductors Product specification Rectifier diodes fast, soft-recovery FEATURES • Low forward volt drop • Fast switching • Soft recovery characteristic • High thermal cycling performance • Low thermal resistance BY229 series SYMBOL QUICK REFERENCE DATA VR = 200 V/ 400 V/ 600 V/800 V IF(AV) = 8 A IFSM ≤ 60 A trr ≤ 135 ns k 1 a 2 GENERAL DESCRIPTION Glass-passivated double diffused rectifier diodes featuring low forward voltage drop, fast reverse recovery and soft recovery characteristic. The devices are intended for use in TV receivers, monitors and switched mode power supplies. The BY229 series is supplied in the conventional leaded SOD59 (TO220AC) package. PINNING PIN 1 2 tab DESCRIPTION cathode anode cathode SOD59 (TO220AC) tab 1 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRSM VRRM VRWM VR IF(AV) PARAMETER Peak non-repetitive reverse voltage Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage Average forward current1 square wave; δ = 0.5; Tmb ≤ 122 ˚C sinusoidal; a = 1.57; Tmb ≤ 125 ˚C CONDITIONS BY229 MIN. -200 200 200 150 150 MAX. -400 400 400 300 300 8 7 11 16 60 66 -600 600 600 500 500 -800 800 800 600 600 UNIT V V V V A A A A A A IF(RMS) IFRM IFSM I2t Tstg Tj RMS forward current Repetitive peak forward current t = 25 µs; δ = 0.5; Tmb ≤ 122 ˚C Non-repetitive peak forward t = 10 ms current. t = 8.3 ms sinusoidal; Tj = 150 ˚C prior to surge; with reapplied VRWM(max) I2t for fusing t = 10 ms Storage temperature Operating junction temperature -40 - 18 150 150 A2s ˚C ˚C 1 Neglecting switching and reverse current losses. September 1998 1 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes fast, soft-recovery THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. in free air. - BY229 series TYP. 60 MAX. 2.0 - UNIT K/W K/W STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL VF IR PARAMETER Forward voltage Reverse current CONDITIONS IF = 20 A VR = VRWM; Tj = 125 ˚C MIN. TYP. 1.5 0.1 MAX. 1.85 0.4 UNIT V mA DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL trr Qs dIR/dt PARAMETER Reverse recovery time Reverse recovery charge Maximum slope of the reverse recovery current CONDITIONS IF = 1 A; VR > 30 V; -dIF/dt = 50 A/µs IF = 2 A; VR > 30 V; -dIF/dt = 20 A/µs IF = 2 A; -dIF/dt = 20 A/µs MIN. TYP. 100 0.5 50 MAX. 135 0.7 60 UNIT ns µC A/µs September 1998 2 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes fast, soft-recovery BY229 series I dI F dt F 80 70 IFS(RMS) / A BY229 IFSM trr time 60 50 40 30 Qs 25% 100% 20 10 I R I rrm 0 1ms 10ms 0.1s tp / s 1s 10s Fig.1. Definition of trr, Qs and Irrm Fig.4. Maximum non-repetitive rms forward current. IF = f(tp); sinusoidal current waveform; Tj = 150˚C prior to surge with reapplied VRWM. IF / A Tj = 150 C Tj = 25 C BY229F 20 PF / W Vo = 1.25 V Rs = 0.03 Ohms BY329 Tmb(max) / C 110 D = 1.0 120 30 15 0.5 0.2 0.1 I tp 20 10 130 tp T t 5 T D= 10 140 typ max 0 0 2 4 6 IF(AV) / A 8 10 150 12 0 0 0.5 1 VF / V 1.5 2 Fig.2. Maximum forward dissipation, PF = f(IF(AV)); square wave current waveform; parameter D = duty cycle = tp/T. BY329 Tmb(max) / C a = 1.57 1.9 10 4 5 140 2.2 2.8 130 Fig.5. Typical and maximum forward characteristic; IF = f(VF); parameter Tj 15 PF / W Vo = 1.25 V Rs = 0.03 Ohms 120 10 Qs / uC Tj = 150 C Tj = 25 C BY329 IF = 10 A 10 A 2A 1 1A 2A 1A 0 0 2 4 IF(AV) / A 6 150 8 0.1 1 10 -dIF/dt (A/us) 100 Fig.3. Maximum forward dissipation, PF = f(IF(AV)); sinusoidal current waveform; parameter a = form factor = IF(RMS)/IF(AV). Fig.6. Maximum Qs at Tj = 25˚C and 150˚C September 1998 3 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes fast, soft-recovery BY229 series 1000 trr / ns BY329 IF = 10 A 10A 1A 1A 10 Transient thermal impedance, Zth j-mb (K/W) 1 100 0.1 0.01 P D tp D= Tj = 150 C Tj = 25 C 10 1 10 -dIF/dt (A/us) 100 0.001 1us T tp T t 10us 100us 1ms 10ms 100ms 1s pulse width, tp (s) BY229 10s Fig.7. Maximum trr measured to 25% of Irrm; Tj = 25˚C and 150˚C Fig.9. Transient thermal impedance Zth = f(tp) 100 Cd / pF BY329 10 1 1 10 VR / V 100 1000 Fig.8. Typical junction capacitance Cd at f = 1 MHz; Tj = 25˚C September 1998 4 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes fast, soft-recovery MECHANICAL DATA Dimensions in mm Net Mass: 2 g BY229 series 4,5 max 10,3 max 1,3 3,7 2,8 5,9 min 3,0 max not tinned 3,0 15,8 max 13,5 min 1,3 max 1 (2x) 2 0,9 max (2x) 0,6 2,4 5,08 Fig.10. SOD59 (TO220AC). pin 1 connected to mounting base. Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". September 1998 5 Rev 1.200 Philips Semiconductors Product specification Rectifier dio.


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