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BUZ81

Siemens Semiconductor Group
Part Number BUZ81
Manufacturer Siemens Semiconductor Group
Description Power Transistor
Published Mar 23, 2005
Detailed Description BUZ 81 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ...
Datasheet PDF File BUZ81 PDF File

BUZ81
BUZ81

Overview
BUZ 81 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 81 VDS 800 V ID 4A RDS(on) 2.
5 Ω Package TO-220 AB Ordering Code C67078-S1345-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 4 Unit A ID IDpuls 16 TC = 48 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 4 13 mJ ID = 4 A, VDD = 50 V, RGS = 25 Ω L = 48 mH, Tj = 25 °C Gate source voltage Power dissipation 410 VGS Ptot ± 20 125 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, c...


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