BUZ76A

BUZ76A Semiconductor Data Sheet October 1998 File Number 2265.1 2.6A, 400V, 2.500 Ohm, N-Channel Power MOSFET Features 2.6A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power rDS(ON) = 2.500Ω (BUZ76 field effect transistor designed for applications such as SOA is Power Dissipation Limited A) switching regulators, switching converters, motor drivers, /Sub Nanosecond Switching Speeds relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. ject Linear Transfer Characteristics (2.6A, This type can be operated directly from integrated circuits. High Input Impedance 400V, Formerly developmental type TA17404. Majority Carrier Device 2.500 Ordering Information Related Literature Ohm, - TB334 “Guidelines for Soldering Surface Mount PACKAGE BRAND N-Chan- PART NUMBER Components to PC Boards” BUZ76A TO-220AB BUZ76A nel Power NOTE: When ordering, use the entire part number. Symbol MOSD FET) /Author G () /KeyS words (Harris Semiconduc- Packaging tor, NJEDEC TO-220AB Channel SOURCE DRAIN Power GATE DRAIN (FLANGE) MOSFET, TO220AB) /Creator () /DOCIN FO pdfmark [ /PageMode /Use- 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright © Harris Corporation 1998 BUZ76A Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified BUZ76A 400 400 2.6 10 ±20 40 0.32 -55 to 150 E 55/150/56 300 260 UNITS V V A A V W W/o...