BUZ72A
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
TYPE BUZ72A
s s s s s s s
V DSS 100 V
R DS( on) < 0.25 Ω
ID...
BUZ72A
N - CHANNEL ENHANCEMENT MODE POWER MOS
TRANSISTORS
TYPE BUZ72A
s s s s s s s
V DSS 100 V
R DS( on) < 0.25 Ω
ID 11 A
TYPICAL RDS(on) = 0.23 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE TO-220
3 1 2
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s
REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VD S V DG R V GS ID I DM P tot T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (pulsed) Total Dissipation at Tc = 25 C Storage Temperature Max. Operating Junction Temperature DIN Humidity Category (DIN 40040) IEC Climatic Category (DIN IEC 68-1)
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Value 100 100 ± 20 11 44 70 -65 to 175 175 E 55/150/56
Unit V V V A A W
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C C
June 1993
1/7
BUZ72A
THERMAL DATA
R thj-cas e Rthj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 2.14 62.5
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C/W C/W
AVALANCHE CHARACTERISTICS
Symbol IA R E AS E AR IA R Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR, VD D = 25 V) Repetitive Avalanche Energy (pulse width limited by T j max...
