BUZ45B

BUZ45B Semiconductor Data Sheet October 1998 File Number 2259.1 10A, 500V, 0.500 Ohm, N-Channel Power MOSFET Features 10A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power rDS(ON) = 0.500Ω (BUZ45 field effect transistor designed for applications such as SOA is Power Dissipation Limited B) switching regulators, switching converters, motor drivers, /Subject relay drivers, and drivers for high power bipolar switching Nanosecond Switching Speeds transistors requiring high speed and low gate drive power. (10A, Linear Transfer Characteristics This type can be operated directly from integrated circuits. 500V, High Input Impedance 0.500 Formerly developmental type TA17435. Majority Carrier Device Ohm, NChannel Ordering Information Symbol PART NUMBER PACKAGE BRAND Power D BUZ45B TO-204AA BUZ45B MOSNOTE: When ordering, use the entire part number. FET) G /Author () S /Keywords (Harris SemiPackaging conducJEDEC TO-204AA tor, NChannel Power DRAIN MOS(FLANGE) FET, TO204AA) SOURCE (PIN 2) /Creator GATE (PIN 1) () /DOCIN FO pdfmark [ /PageMode /UseOutlines /DOCVIEW 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright © Harris Corporation 1998 BUZ45B Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified BUZ45B 500 500 10 40 ±20 125 1.0 -55 to 150 E 55/150/56 260 UNITS V V A A V W W/oC oC Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . ...