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BUZ40B Dataheets PDF



Part Number BUZ40B
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description Power Transistor
Datasheet BUZ40B DatasheetBUZ40B Datasheet (PDF)

BUZ 40 B SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 40 B VDS 500 V ID 8.5 A RDS(on) 0.8 Ω Package TO-220 AB Ordering Code C67078-S1305-A4 Maximum Ratings Parameter Continuous drain current Symbol Values 8.5 Unit A ID IDpuls 34 TC = 35 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 10 13 mJ ID = 10 A, VDD = .

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BUZ 40 B SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 40 B VDS 500 V ID 8.5 A RDS(on) 0.8 Ω Package TO-220 AB Ordering Code C67078-S1305-A4 Maximum Ratings Parameter Continuous drain current Symbol Values 8.5 Unit A ID IDpuls 34 TC = 35 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 10 13 mJ ID = 10 A, VDD = 50 V, RGS = 25 Ω L = 10.3 mH, Tj = 25 °C Gate source voltage Power dissipation 570 VGS Ptot ± 20 150 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Semiconductor Group Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 ≤ 0.83 75 E 55 / 150 / 56 °C K/W 1 07/96 BUZ 40 B Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 500 3 0.1 10 10 0.6 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA VDS = 500 V, VGS = 0 V, Tj = 25 °C VDS = 500 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS 100 nA Ω 0.8 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 10 V, ID = 5.5 A Semiconductor Group 2 07/96 BUZ 40 B Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 5 8 1500 180 65 - S pF 2300 270 100 ns 20 30 VDS≥ 2 * ID * RDS(on)max, ID = 5.5 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Rise time tr 70 110 VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Turn-off delay time td(off) 260 340 VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Fall time tf 80 100 VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Semiconductor Group 3 07/96 BUZ 40 B Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TC = 25 °C Inverse diode direct current,pulsed A 1.1 380 4 8.5 34 V 1.3 ns µC Values typ. max. Unit ISM VSD trr Qrr TC = 25 °C Inverse diode forward voltage VGS = 0 V, IF = 20 A Reverse recovery time VR = 100 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge VR = 100 V, IF=lS, diF/dt = 100 A/µs Semiconductor Group 4 07/96 BUZ 40 B Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V 9 A 160 W Ptot ID 120 7 6 100 5 80 4 60 3 2 1 0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160 40 20 0 0 TC TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25°C 10 2 Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 0 A t = 6.4µs p 10 µs K/W ID 100 µs ZthJC 10 1 10 -1 /I D 1 ms DS (o n) =V DS 10 ms R D = 0.50 0.20 10 0 10 -2 0.10 0.05 single pulse 0.02 0.01 DC 10 -1 0 10 10 1 10 2 V 10 3 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 07/96 BUZ 40 B Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 19 A 16 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS 2.6 Ptot = 150W l kj i h g f e VGS [V] a 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 Ω 2.2 a b c d ID 14 12 10 8 6 4 2 a c d RDS (on) b c d e f g h i j 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 VGS [V] = a 4.0 4.5 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 h i j k 8.0 9.0 10.0 20.0 e f h i j k g k 10.0 l 20.0 b 0 0 4 8 12 16 20 24 28 V 34 0 2 4 6 8 10 12 14 A 18 VDS ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 10 A parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 12 S 10 ID 8 7 gfs 9 8 6 5 4 3 7 6 5 4 3 2 2 1 0 0 1 0 1 2 3 4 5 6 7 8 V 10 0 1 2 3 4 5 6 7 A ID 9 VGS Semiconductor Group 6 07/96 BUZ 40 B Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 5.5 A, VGS = 10 V 3.4 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 Ω RDS (on) 2.8 98% VGS(th) 3.6 3.2 2.8 2.4 2.4 2.0 typ 2% 1.6 1.2 0.8 2.0 98% typ 1.6 1.2 0.8 0.4 0.0 -60 0.4 0.0 -60 -20 20 60 100 °C 160 -20 20 60 100 °C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs 10 2 nF C A IF Ciss 10 0 10 1 Coss 10 -1 10 0 Crss Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -2 0 5 10 15 20 25 30 V VDS 40 10 -1 0.0 0.4 0.8 .


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