Document
BUZ 40 B
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 40 B
VDS
500 V
ID
8.5 A
RDS(on)
0.8 Ω
Package TO-220 AB
Ordering Code C67078-S1305-A4
Maximum Ratings Parameter Continuous drain current Symbol Values 8.5 Unit A
ID IDpuls
34
TC = 35 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse
IAR EAR EAS
10 13 mJ
ID = 10 A, VDD = 50 V, RGS = 25 Ω L = 10.3 mH, Tj = 25 °C
Gate source voltage Power dissipation 570
VGS Ptot
± 20 150
V W
TC = 25 °C
Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Semiconductor Group
Tj Tstg RthJC RthJA
-55 ... + 150 -55 ... + 150 ≤ 0.83 75 E 55 / 150 / 56
°C K/W
1
07/96
BUZ 40 B
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
500 3 0.1 10 10 0.6 4
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
2.1
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
1 100
µA
VDS = 500 V, VGS = 0 V, Tj = 25 °C VDS = 500 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
IGSS
100
nA Ω 0.8
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
RDS(on)
VGS = 10 V, ID = 5.5 A
Semiconductor Group
2
07/96
BUZ 40 B
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit
gfs
5 8 1500 180 65 -
S pF 2300 270 100 ns 20 30
VDS≥ 2 * ID * RDS(on)max, ID = 5.5 A
Input capacitance
Ciss Coss
-
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
Crss
-
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
td(on)
VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω
Rise time
tr
70 110
VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω
Turn-off delay time
td(off)
260 340
VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω
Fall time
tf
80 100
VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω
Semiconductor Group
3
07/96
BUZ 40 B
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TC = 25 °C Inverse diode direct current,pulsed A 1.1 380 4 8.5 34 V 1.3 ns µC Values typ. max. Unit
ISM VSD trr Qrr
TC = 25 °C
Inverse diode forward voltage
VGS = 0 V, IF = 20 A
Reverse recovery time
VR = 100 V, IF=lS, diF/dt = 100 A/µs
Reverse recovery charge
VR = 100 V, IF=lS, diF/dt = 100 A/µs
Semiconductor Group
4
07/96
BUZ 40 B
Power dissipation Ptot = ƒ(TC)
Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V
9 A
160
W
Ptot
ID
120
7 6
100 5 80 4 60 3 2 1 0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160
40
20 0 0
TC
TC
Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25°C
10 2
Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T
10 0
A
t = 6.4µs p 10 µs
K/W
ID
100 µs
ZthJC
10 1 10 -1
/I
D
1 ms
DS (o n)
=V
DS
10 ms
R
D = 0.50 0.20
10
0
10
-2
0.10 0.05 single pulse 0.02 0.01
DC
10 -1 0 10
10
1
10
2
V 10
3
10 -3 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
s 10
0
VDS
tp
Semiconductor Group
5
07/96
BUZ 40 B
Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs
19 A 16
Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS
2.6
Ptot = 150W
l
kj i h g
f e VGS [V]
a 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0
Ω
2.2
a
b
c
d
ID
14 12 10 8 6 4 2
a c d
RDS (on)
b c d e f g h i j
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0
VGS [V] =
a 4.0 4.5 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 h i j k 8.0 9.0 10.0 20.0
e f h i j k g
k 10.0 l 20.0
b
0 0
4
8
12
16
20
24
28
V
34
0
2
4
6
8
10
12
14
A
18
VDS
ID
Typ. transfer characteristics ID = f (VGS)
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max
10 A
parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max
12 S 10
ID
8 7
gfs
9 8
6 5 4 3
7 6 5 4 3
2 2 1 0 0 1 0 1 2 3 4 5 6 7 8 V 10 0 1 2 3 4 5 6 7 A ID 9
VGS
Semiconductor Group
6
07/96
BUZ 40 B
Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 5.5 A, VGS = 10 V
3.4
Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA
4.6 V 4.0
Ω
RDS (on)
2.8
98%
VGS(th)
3.6 3.2 2.8 2.4
2.4 2.0
typ
2%
1.6 1.2 0.8
2.0
98% typ
1.6 1.2 0.8
0.4 0.0 -60
0.4 0.0 -60 -20 20 60 100 °C 160
-20
20
60
100
°C
160
Tj
Tj
Typ. capacitances
C = f (VDS) parameter:VGS = 0V, f = 1MHz
10 1
Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs
10 2
nF C
A
IF Ciss
10 0 10 1
Coss
10 -1 10 0
Crss
Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%)
10 -2 0
5
10
15
20
25
30
V VDS
40
10 -1 0.0
0.4
0.8
.