Document
BUZ 357
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 357
VDS
1000 V
ID
5.1 A
RDS(on)
2Ω
Package TO-218 AA
Ordering Code C67078-S3110-A2
Maximum Ratings Parameter Continuous drain current Symbol Values 5.1 Unit A
ID IDpuls
20
TC = 25 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse
IAR EAR EAS
5.1 18 mJ
ID = 5.1 A, VDD = 50 V, RGS = 25 Ω L = 62 mH, Tj = 25 °C
Gate source voltage Power dissipation 850
VGS Ptot
± 20 125
V W
TC = 25 °C
Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Semiconductor Group
Tj Tstg RthJC RthJA
-55 ... + 150 -55 ... + 150 ≤1 75 E 55 / 150 / 56
°C K/W
1
01/97
BUZ 357
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
1000 3 10 10 1.7 4
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
2.1
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
1 100
µA
VDS = 1000 V, VGS = 0 V, Tj = 25 °C VDS = 800 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
IGSS
100
nA Ω 2
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
RDS(on)
VGS = 10 V, ID = 3.2 A
Semiconductor Group
2
01/97
BUZ 357
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit
gfs
2.5 5.2 1700 170 80 -
S pF 2200 300 120 ns 30 45
VDS≥ 2 * ID * RDS(on)max, ID = 3.2 A
Input capacitance
Ciss Coss
-
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
Crss
-
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
td(on)
VDD = 30 V, VGS = 10 V, ID = 2.5 A RGS = 50 Ω
Rise time
tr
100 160
VDD = 30 V, VGS = 10 V, ID = 2.5 A RGS = 50 Ω
Turn-off delay time
td(off)
400 520
VDD = 30 V, VGS = 10 V, ID = 2.5 A RGS = 50 Ω
Fall time
tf
130 170
VDD = 30 V, VGS = 10 V, ID = 2.5 A RGS = 50 Ω
Semiconductor Group
3
01/97
BUZ 357
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TC = 25 °C Inverse diode direct current,pulsed A 1 1.5 6.5 5.1 20 V 1.2 µs µC Values typ. max. Unit
ISM VSD trr Qrr
TC = 25 °C
Inverse diode forward voltage
VGS = 0 V, IF = 10 A
Reverse recovery time
VR = 100 V, IF=lS, diF/dt = 100 A/µs
Reverse recovery charge
VR = 100 V, IF=lS, diF/dt = 100 A/µs
Semiconductor Group
4
01/97
BUZ 357
Power dissipation Ptot = ƒ(TC)
Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V
5.5 A
130 W 110
Ptot
100 90 80 70 60 50 40 30
ID
4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0
20 10 0 0 20 40 60 80 100 120 °C 160 0.5 0.0 0 20 40 60 80 100 120 °C 160
TC
TC
Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25°C
10 2
Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T
10 1
K/W A
ID
10 1
t = 21.0µs p
ZthJC
10 0
100 µs
/I
10 -1 D = 0.50
1 ms
=V
DS
D
0.20 0.10
10 ms
10
0
R
DS (on )
10 -2
0.05 0.02 0.01 single pulse
10
-1
10
0
10
1
10
2
DC 3 V 10
10
-3
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
s 10
0
VDS
tp
Semiconductor Group
5
01/97
BUZ 357
Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs
12 A 10
Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C
6.5
Ptot = 125W
l kj i hg f
Ω
e
VGS [V]
a
b
c
5.5
ID
d
a b c
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0
9 8 7 6 5 4 3 2
a b c
RDS (on)
5.0 4.5 4.0 3.5 3.0
d
d e f g h i j k l
2.5 2.0 1.5 1.0 0.5 0.0
VGS [V] =
a 4.0 4.5 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5
e f g h i j k
1 0 0 10 20 30 40 V 60
h i j k 8.0 9.0 10.0 20.0
0
2
4
6
8
A
11
VDS
ID
Typ. transfer characteristics ID = f (VGS)
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max
6.0 A 5.0
parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max
7.0 S 6.0
ID
4.5 4.0 3.5 3.0 2.5 2.0 1.5
gfs
5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5
1.0 0.5 0.0 0 1 2 3 4 5 6 7 8 V VGS 10
1.0 0.5 0.0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
A ID
4.0
Semiconductor Group
6
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BUZ 357
Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 3.2 A, VGS = 10 V
10
Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA
4.6 V 4.0
Ω
RDS (on)
8 7 6 5 4 3 2 1 0 -60
98%
VGS(th)
3.6 3.2 2.8 2.4 2.0
typ
2%
98% typ
1.6 1.2 0.8 0.4 0.0 -60 -20 20 60 100 °C 160
-20
20
60
100
°C
160
Tj
Tj
Typ. capacitances
C = f (VDS) parameter:VGS = 0V, f = 1MHz
10 1
Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs
10 2
nF C
A
Ciss
10 0
IF
10 1
Coss
10 -1 10 0
Crss
Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C.