BUZ349

SIPMOS ® Power Transistor BUZ 349 N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS 100 V ID 32 A RDS(on) 0.06 Ω Package Ordering Code BUZ 349 TO-218 AA C67078-S3113-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 27 ˚C ID A 32 Pulsed drain current TC = 25 ˚C IDpuls 128 IAR EAR EAS Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse ID = 32 A, VDD = 25 V, RGS = 25 Ω L = 322 µH, Tj = 25 ˚C 32 15 mJ 220 VGS Ptot Gate source voltage Power dissipation TC = 25 ˚C ± 20 125 V W Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 ˚C ≤1 75 E 55 / 150 / 56 K/W Data Sheet 1 05.99 BUZ 349 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C V (BR)DSS V 100 - Gate threshold voltage VGS=VDS, ID = 1 mA V GS(th) 2.1 IDSS 3 4 µA Zero gate voltage drain current VDS = 100 V, V GS = 0 V, Tj = 25 ˚C VDS = 100 V, V GS = 0 V, Tj = 125 ˚C IGSS 0.1 10 1 100 nA Gate-source leakage current VGS = 20 V, VDS = 0 V RDS(on) 10 100 Drain-Source on-resistance VGS = 10 V, ID = 21 A Ω 0.05 0.06 Data Sheet 2 05...