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BUZ325

Infineon Technologies AG
Part Number BUZ325
Manufacturer Infineon Technologies AG
Description Power Transistor
Published Mar 23, 2005
Detailed Description BUZ 325 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type...
Datasheet PDF File BUZ325 PDF File

BUZ325
BUZ325

Overview
BUZ 325 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 325 400 V 12.
5 A 0.
35 Ω TO-218 AA C67078-S3118-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 27 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse ID = 12.
5 A, VDD = 50 V, RGS = 25 Ω L = 7.
5 mH, Tj = 25 °C Gate source voltage Power dissipation TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC...


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