BUZ323

BUZ 323 SIPMOS ® Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 323 400 V 15 A 0.3 Ω TO-218 AA C67078-S3127-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 25 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse ID = 15 A, VDD = 50 V, RGS = 25 Ω L = 6.14 mH, Tj = 25 °C Gate source voltage Power dissipation TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 ID 15 IDpuls 60 IAR EAR EAS 15 18 A mJ 790 VGS Ptot 170 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 °C ± 20 V W ≤ 0.74 75 E 55 / 150 / 56 K/W Semiconductor Group 1 03/99 BUZ 323 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS=VDS, ID = 1 mA Zero gate voltage drain current VDS = 400 V, VGS = 0 V, Tj = 25 °C VDS = 400 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current VGS = 20 V, VDS = 0 V Drain-Source on-resistance VGS = 10 V, ID = 9.5 A V(BR)DSS 400 VGS(th) 2.1 IDSS IGSS RDS(on) 0.25 0.3 10 100 0.1 10 1 100 3 4 - V µA nA Ω Semiconductor Group 2 03/...