BUZ32
Semiconductor
Data Sheet
October 1998
File Number 2416.1
9.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET
Features
9.5A, 200V
[ /Title This is an N-Channel enhancement mode silicon gate power rDS(ON) = 0.400Ω (BUZ32) field effect transistor designed for applications such as SOA is Power Dissipation Limited /Subject switching regulators, switchi...
