BUT18F

DISCRETE SEMICONDUCTORS DATA SHEET BUT18F; BUT18AF Silicon diffused power transistors Product specification Supersedes data of 1997 Aug 13 1999 Jun 11 Philips Semiconductors Product specification Silicon diffused power transistors DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 package with electrically isolated mounting base. APPLICATIONS Converters Inverters Switching regulators Motor control systems. andbook, halfpage BUT18F; BUT18AF PINNING PIN 1 2 3 mb base collector emitter mounting base; electrically isolated from all pins DESCRIPTION 2 1 3 MBB008 1 2 3 MBK109 Fig.1 Simplified outline (SOT186) and symbol. QUICK REFERENCE DATA SYMBOL VCESM BUT18F BUT18AF VCEO collector-emitter voltage BUT18F BUT18AF VCEsat ICsat IC ICM Ptot tf collector-emitter saturation voltage collector saturation current collector current (DC) collector current (peak value) total power dissipation fall time see Fig.4 see Fig.4 Th ≤ 25 °C; see Fig.2 resistive load; see Figs 10 and 11 see Fig.7 open base 400 450 1.5 4 6 12 33 0.8 V V V A A A W µs PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-h PARAMETER CONDITIONS note 2 Notes 1. Mounted without heatsink compound and 30 ±5 N force on centre of package. 2. Mounted with heatsink compound and 30 ±5 N force on centre of package. 1999 Jun 11 2 VALUE 6.15 3.65 UNIT K/W K/W thermal resistance from junction to external heatsink...