DISCRETE SEMICONDUCTORS
DATA SHEET
BUT12; BUT12A Silicon diffused power transistors
Product specification Supersedes da...
DISCRETE SEMICONDUCTORS
DATA SHEET
BUT12; BUT12A Silicon diffused power
transistors
Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13
Philips Semiconductors
Product specification
Silicon diffused power
transistors
DESCRIPTION High-voltage, high-speed, glass-passivated
NPN power
transistor in a TO-220AB package.
andbook, halfpage
BUT12; BUT12A
APPLICATIONS Converters Inverters Switching
regulators Motor control systems.
handbook, halfpage
2 1
MBB008
3
MBK106
1 2 3
PINNING PIN 1 2 3 DESCRIPTION base collector; connected to mounting base emitter
Fig.1 Simplified outline (TO-220AB) and symbol.
QUICK REFERENCE DATA SYMBOL VCESM BUT12 BUT12A VCEO collector-emitter voltage BUT12 BUT12A VCEsat ICsat collector-emitter saturation voltage collector saturation current BUT12 BUT12A IC ICM Ptot tf collector current (DC) collector current (peak value) total power dissipation fall time see Figs 3 and 4 see Fig. 4 Tmb ≤ 25 °C; see Fig.2 resistive load; see Figs 12 and 13 6 5 8 20 125 0.8 A A A A W µs see Fig.8 open base 400 450 1.5 V V V PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT
THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base VALUE 1 UNIT K/W
1997 Aug 13
1
Philips Semiconductors
Product specification
Silicon diffused power
transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMB...