Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11XI
GENERAL DESCRIPTION
High-volt...
Philips Semiconductors
Product specification
Silicon Diffused Power
Transistor
BUT11XI
GENERAL DESCRIPTION
High-voltage, high-speed glass-passivated
npn power
transistor in a plastic full-pack envelope intended for use in electronic HF/OH lighting ballast applications, converters, inverters, switching
regulators, motor control systems, etc.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP. 2.5 80 MAX. 1000 450 5 10 32 1.5 150 UNIT V V A A W V A ns
Ths ≤ 25 ˚C IC = 2.5 A; IB = 0.33 A ICon=2.5 A; IBon=0.5 A
PINNING - SOT186A
PIN 1 2 3 base collector emitter DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c b
1 2 3
case isolated
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1000 450 5 10 2 4 32 150 150 UNIT V V A A A A W ˚C ˚C
Ths ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to am...