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BUT11F

Part Number	BUT11F
Manufacturer	NXP
Description	Silicon Diffused Power Transistor
Published	Mar 23, 2005
Detailed Description	Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11F GENERAL DESCRIPTION High-volta...
Datasheet	BUT11F PDF File

Overview

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11F GENERAL DESCRIPTION High-voltage, high-speed glass-passivated npn power transistor in a SOT186 envelope with electrically insulated mounting base,intended for use in converters, inverters, switching regulators, motor control systems, etc.
QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP.
MAX.
850 400 5 10 20 1.
5 3 800 UNIT V V ...

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