Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11APX
GENERAL DESCRIPTION
Enhanced...
Philips Semiconductors
Product specification
Silicon Diffused Power
Transistor
BUT11APX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching
npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP. 3.5 145 MAX. 1000 1000 450 5 10 32 1.5 160 UNIT V V V A A W V A ns
Ths ≤ 25 ˚C ICsat=2.5A,IB1=0.5A,IB2=0.8A
PINNING - SOT186A
PIN 1 2 3 base collector emitter DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c b
1 2 3
case isolated
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO VCBO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector to emitter voltage Collector to emitter voltage (open base) Collector to base voltage (open emitter) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 ...