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BUP410D

Siemens Semiconductor Group
Part Number BUP410D
Manufacturer Siemens Semiconductor Group
Description IGBT
Published Mar 23, 2005
Detailed Description BUP 410D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail cu...
Datasheet PDF File BUP410D PDF File

BUP410D
BUP410D

Overview
BUP 410D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 G Type BUP 410D Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 600 600 Unit V Pin 2 C Ordering Code Q67040-A4425-A2 Pin 3 E VCE 600V IC 13A Package TO-220 AB VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 13 8 TC = 25 °C TC = 90 °C Pulsed collector current, tp = 1 ms ICpuls 26 16 TC = 25 °C TC = 90 °C Diode forward current IF 11 TC = 90 °C Pulsed diode current, tp = 1 ms IFpuls 72 TC = 25 °C Power dissipation Ptot 50 W -55 .
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