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BUP402

Siemens Semiconductor Group

IGBT

BUP 402 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • A...


Siemens Semiconductor Group

BUP402

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BUP 402 IGBT Preliminary data Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated Pin 1 G Type BUP 402 Maximum Ratings Parameter Collector-emitter voltage Emitter-collector voltage Collector-gate voltage Symbol Values 600 Unit V Pin 2 C Ordering Code C67078-A4405-A2 Pin 3 E VCE 600V IC 36A Package TO-220 AB VCE VEC VCGR RGE = 20 kΩ Gate-emitter voltage DC collector current 600 VGE IC ± 20 A 36 22 TC = 25 °C TC = 90 °C Pulsed collector current, tp = 1 ms ICpuls 72 40 TC = 25 °C TC = 90 °C Avalanche energy, single pulse EAS 42 mJ IC = 20 A, VCC = 50 V, RGE = 25 Ω L = 200 µH, Tj = 25 °C Power dissipation Ptot 150 W - 55 ... + 150 - 55 ... + 150 °C TC = 25 °C Chip or operating temperature Storage temperature Tj Tstg Semiconductor Group 1 Dec-02-1996 BUP 402 Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit - RthJC ≤ 0.83 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.1 2.2 3 3.3 6.5 2.7 2.8 - V VGE = VCE, IC = 0.5 mA, Tj = 25 °C Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 20 A, Tj = 25 °C VGE = 15 V, IC = 20 A, Tj = 125 °C VGE = 15 V, IC = 40 A, Tj = 25 °C VGE = 15 V, IC = 40 A, Tj = 125 °C Zero gate voltage collect...




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