IGBT
BUP 402
IGBT
Preliminary data
• Low forward voltage drop • High switching speed • Low tail current • Latch-up free • A...
Description
BUP 402
IGBT
Preliminary data
Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated Pin 1 G Type BUP 402 Maximum Ratings Parameter Collector-emitter voltage Emitter-collector voltage Collector-gate voltage Symbol Values 600 Unit V Pin 2 C Ordering Code C67078-A4405-A2 Pin 3 E
VCE
600V
IC
36A
Package TO-220 AB
VCE VEC VCGR
RGE = 20 kΩ
Gate-emitter voltage DC collector current
600
VGE IC
± 20 A 36 22
TC = 25 °C TC = 90 °C
Pulsed collector current, tp = 1 ms
ICpuls
72 40
TC = 25 °C TC = 90 °C
Avalanche energy, single pulse
EAS
42
mJ
IC = 20 A, VCC = 50 V, RGE = 25 Ω L = 200 µH, Tj = 25 °C
Power dissipation
Ptot
150
W - 55 ... + 150 - 55 ... + 150 °C
TC = 25 °C
Chip or operating temperature Storage temperature
Tj Tstg
Semiconductor Group
1
Dec-02-1996
BUP 402
Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit -
RthJC
≤ 0.83
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.5 5.5 2.1 2.2 3 3.3 6.5 2.7 2.8 -
V
VGE = VCE, IC = 0.5 mA, Tj = 25 °C
Collector-emitter saturation voltage
VCE(sat)
-
VGE = 15 V, IC = 20 A, Tj = 25 °C VGE = 15 V, IC = 20 A, Tj = 125 °C VGE = 15 V, IC = 40 A, Tj = 25 °C VGE = 15 V, IC = 40 A, Tj = 125 °C
Zero gate voltage collect...
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