BUP314D

BUP 314D IGBT With Antiparallel Diode Preliminary data Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode Pin 1 G Type BUP 314D Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V Pin 2 C Ordering Code Q67040-A4226-A2 Pin 3 E VCE IC Package TO-218 AB 1200V 42A VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current, (limited by bond wire) ± 20 A 42 33 TC = 60 °C TC = 90 °C Pulsed collector current, tp = 1 ms ICpuls 84 66 TC = 25 °C TC = 90 °C Diode forward current IF 28 TC = 90 °C Pulsed diode current, tp = 1 ms IFpuls 168 TC = 25 °C Power dissipation Ptot 300 W -55 ... + 150 -55 ... + 150 Jul-30-1996 °C TC = 25 °C Chip or operating temperature Storage temperature 1 Tj Tstg Semiconductor Group BUP 314D Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Diode thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit - RthJC RthJCD ≤ 0.42 ≤ 0.83 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.7 3.3 3.4 4.3 6.5 3.2 3.9 - V VGE = VCE, IC = 0.35 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 25 A, Tj = 25 °C VGE = 15 V, IC = 25 A, Tj = 125 °C VGE = 15 V, IC = 42 A, ...