IGBT
BUP 309
IGBT Preliminary data • High switching speed • Low tail current • Latch-up free • Avalanche rated • Low forward...
Description
BUP 309
IGBT Preliminary data High switching speed Low tail current Latch-up free Avalanche rated Low forward voltage drop Remark: The TO-218 AB case doesn't solve the standards VDE 0110 and UL 508 for creeping distance Pin 1 G Type BUP 309 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1700 1700 Unit V Pin 2 C Ordering Code Q67078-A4204-A2 Pin 3 E
VCE
IC
Package TO-218 AB
1700V 25A
VCE VCGR VGE IC
RGE = 20 kΩ
Gate-emitter voltage DC collector current
± 20 A 25 16
TC = 25 °C TC = 90 °C
Pulsed collector current, tp = 1 ms
ICpuls
50 32
TC = 25 °C TC = 90 °C
Avalanche energy, single pulse
EAS
23
mJ
IC = 15 A, VCC = 50 V, RGE = 25 Ω L = 200 µH, Tj = 25 °C
Power dissipation
Ptot
310
W -55 ... + 150 -55 ... + 150 Jul-30-1996 °C
TC = 25 °C
Chip or operating temperature Storage temperature
Semiconductor Group
Tj Tstg
1
BUP 309
Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit -
RthJC
≤ 0.4
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.5 5.5 3.5 4.5 1 6.5 4.2 -
V
VGE = VCE, IC = 1 mA
Collector-emitter saturation voltage
VCE(sat)
-
VGE = 15 V, IC = 15 A, Tj = 25 °C VGE = 15 V, IC = 15 A, Tj = 125 °C VGE = 15 V, IC = 15 A, Tj = 150 °C
Zero gate voltage c...
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