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BUP307D

Siemens Semiconductor Group
Part Number BUP307D
Manufacturer Siemens Semiconductor Group
Description IGBT
Published Mar 23, 2005
Detailed Description BUP 307D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail cu...
Datasheet PDF File BUP307D PDF File

BUP307D
BUP307D

Overview
BUP 307D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 G Type BUP 307D Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V Pin 2 C Ordering Code Q67040-A4221-A2 Pin 3 E VCE IC Package TO-218 AB 1200V 35A VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 35 23 TC = 25 °C TC = 90 °C Pulsed collector current, tp = 1 ms ICpuls 70 46 TC = 25 °C TC = 90 °C Diode forward current IF 18 TC = 90 °C Pulsed diode current, tp = 1 ms IFpuls 108 TC = 25 °C Power dissipation Ptot 300 W -...


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