Document
BUP 305 D
IGBT With Antiparallel Diode
Preliminary data
• Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1
G
Pin 2
C
Pin 3
E
Type BUP 305 D Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage
VCE
IC
Package TO-218 AB
Ordering Code Q67040-A4225-A2
1200V 12A
Symbol
Values 1200 1200
Unit V
VCE VCGR VGE IC
RGE = 20 kΩ
Gate-emitter voltage DC collector current
± 20 A 12 8
TC = 25 °C TC = 90 °C
Pulsed collector current, tp = 1 ms
ICpuls
24 16
TC = 25 °C TC = 90 °C
Diode forward current
IF
8
TC = 90 °C
Pulsed diode current, tp = 1 ms
IFpuls
48
TC = 25 °C
Power dissipation
Ptot
100
W -55 ... + 150 -55 ... + 150 °C
TC = 25 °C
Chip or operating temperature Storage temperature
Tj Tstg
Semiconductor Group
1
Dec-02-1996
BUP 305 D
Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Diode thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit -
RthJC RthJCD
1 3.1
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.5 5.5 2.8 3.8 6.5 3.3 4.3
V
VGE = VCE, IC = 0.3 mA, Tj = 25 °C
Collector-emitter saturation voltage
VCE(sat)
-
VGE = 15 V, IC = 5 A, Tj = 25 °C VGE = 15 V, IC = 5 A, Tj = 125 °C
Zero gate voltage collector current
ICES
0.35
mA nA 100
VCE = 1200 V, VGE = 0 V, Tj = 25 °C
Gate-emitter leakage current
IGES
VGE = 20 V, VCE = 0 V
AC Characteristics Transconductance
gfs
1.7 2.5 650 50 20 -
S pF 800 80 30
VCE = 20 V, IC = 5 A
Input capacitance
Ciss Coss
-
VCE = 25 V, VGE = 0 V, f = 1 MHz
Output capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
Crss
-
VCE = 25 V, VGE = 0 V, f = 1 MHz
Semiconductor Group
2
Dec-02-1996
BUP 305 D
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time Values typ. max. Unit
td(on)
30 50
ns
VCC = 600 V, VGE = 15 V, IC = 5 A RGon = 68 Ω
Rise time
tr
20 30
nS
VCC = 600 V, VGE = 15 V, IC = 5 A RGon = 68 Ω
Turn-off delay time
td(off)
180 270
ns
VCC = 600 V, VGE = -15 V, IC = 5 A RGoff = 68 Ω
Fall time
tf
15 25 mWs 0.7 -
VCC = 600 V, VGE = -15 V, IC = 5 A RGoff = 68 Ω
Total turn-off loss energy
Eoff
VCC = 600 V, VGE = -15 V, IC = 5 A RGoff = 68 Ω, Tj = 25 °C
Free-Wheel Diode Diode forward voltage
VF
2.3 1.9 3 -
V
IF = 4 A, VGE = 0 V, Tj = 25 °C IF = 4 A, VGE = 0 V, Tj = 125 °C
Reverse recovery time
trr
ns
IF = 4 A, VR = -300 V, VGE = 0 V diF/dt = -800 A/µs Tj = 25 °C Tj = 125 °C
Reverse recovery charge 60 100 µC
Qrr
IF = 4 A, VR = -300 V, VGE = 0 V diF/dt = -800 A/µs Tj = 25 °C Tj = 125 °C
3 1 1.8
Semiconductor Group
Dec-02-1996
BUP 305 D
Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C
110 W
Collec.