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BUP305D Dataheets PDF



Part Number BUP305D
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description IGBT
Datasheet BUP305D DatasheetBUP305D Datasheet (PDF)

BUP 305 D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 G Pin 2 C Pin 3 E Type BUP 305 D Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage VCE IC Package TO-218 AB Ordering Code Q67040-A4225-A2 1200V 12A Symbol Values 1200 1200 Unit V VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 12 8 TC = 25 °C TC = .

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BUP 305 D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 G Pin 2 C Pin 3 E Type BUP 305 D Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage VCE IC Package TO-218 AB Ordering Code Q67040-A4225-A2 1200V 12A Symbol Values 1200 1200 Unit V VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 12 8 TC = 25 °C TC = 90 °C Pulsed collector current, tp = 1 ms ICpuls 24 16 TC = 25 °C TC = 90 °C Diode forward current IF 8 TC = 90 °C Pulsed diode current, tp = 1 ms IFpuls 48 TC = 25 °C Power dissipation Ptot 100 W -55 ... + 150 -55 ... + 150 °C TC = 25 °C Chip or operating temperature Storage temperature Tj Tstg Semiconductor Group 1 Dec-02-1996 BUP 305 D Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Diode thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit - RthJC RthJCD 1 3.1 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.8 3.8 6.5 3.3 4.3 V VGE = VCE, IC = 0.3 mA, Tj = 25 °C Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 5 A, Tj = 25 °C VGE = 15 V, IC = 5 A, Tj = 125 °C Zero gate voltage collector current ICES 0.35 mA nA 100 VCE = 1200 V, VGE = 0 V, Tj = 25 °C Gate-emitter leakage current IGES VGE = 20 V, VCE = 0 V AC Characteristics Transconductance gfs 1.7 2.5 650 50 20 - S pF 800 80 30 VCE = 20 V, IC = 5 A Input capacitance Ciss Coss - VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Crss - VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group 2 Dec-02-1996 BUP 305 D Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time Values typ. max. Unit td(on) 30 50 ns VCC = 600 V, VGE = 15 V, IC = 5 A RGon = 68 Ω Rise time tr 20 30 nS VCC = 600 V, VGE = 15 V, IC = 5 A RGon = 68 Ω Turn-off delay time td(off) 180 270 ns VCC = 600 V, VGE = -15 V, IC = 5 A RGoff = 68 Ω Fall time tf 15 25 mWs 0.7 - VCC = 600 V, VGE = -15 V, IC = 5 A RGoff = 68 Ω Total turn-off loss energy Eoff VCC = 600 V, VGE = -15 V, IC = 5 A RGoff = 68 Ω, Tj = 25 °C Free-Wheel Diode Diode forward voltage VF 2.3 1.9 3 - V IF = 4 A, VGE = 0 V, Tj = 25 °C IF = 4 A, VGE = 0 V, Tj = 125 °C Reverse recovery time trr ns IF = 4 A, VR = -300 V, VGE = 0 V diF/dt = -800 A/µs Tj = 25 °C Tj = 125 °C Reverse recovery charge 60 100 µC Qrr IF = 4 A, VR = -300 V, VGE = 0 V diF/dt = -800 A/µs Tj = 25 °C Tj = 125 °C 3 1 1.8 Semiconductor Group Dec-02-1996 BUP 305 D Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C 110 W Collec.


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