IGBT
BUP 300
IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Av...
Description
BUP 300
IGBT Preliminary data Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated Pin 1 G Type BUP 300 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V Pin 2 C Ordering Code Q67078-A4203-A2 Pin 3 E
VCE
IC
Package TO-218 AB
1200V 3.6A
VCE VCGR VGE IC
RGE = 20 kΩ
Gate-emitter voltage DC collector current
± 20 A 3.6 2.4
TC = 25 °C TC = 90 °C
Pulsed collector current, tp = 1 ms
ICpuls
7.2 4.8
TC = 25 °C TC = 90 °C
Avalanche energy, single pulse
EAS
3.5
mJ
IC = 1.5 A, VCC = 50 V, RGE = 25 Ω L = 3.3 mH, Tj = 25 °C
Power dissipation
Ptot
40
W -55 ... + 150 -55 ... + 150 °C
TC = 25 °C
Chip or operating temperature Storage temperature
Tj Tstg
Semiconductor Group
1
Jul-30-1996
BUP 300
Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit -
RthJC
≤ 3.1
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.5 5.5 2.8 3.8 4 1 0.1 6.5 3.3 4.3 4.5
V
VGE = VCE, IC = 0.1 mA
Collector-emitter saturation voltage
VCE(sat)
-
VGE = 15 V, IC = 1.5 A, Tj = 25 °C VGE = 15 V, IC = 1.5 A, Tj = 125 °C VGE = 15 V, IC = 1.5 A, Tj = 150 °C
Zero gate voltage collector current
ICES
25 100
µA
VCE = 1000 V, VGE = 0 V, Tj = 25 °C ...
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