BUP200

BUP 200 IGBT Preliminary data Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated Pin 1 G Type BUP 200 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V Pin 2 C Ordering Code Q67078-A4400-A2 Pin 3 E VCE IC Package TO-220 AB 1200V 3.6A VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 3.6 2.4 TC = 25 °C TC = 90 °C Pulsed collector current, tp = 1 ms ICpuls 7.2 4.8 TC = 25 °C TC = 90 °C Avalanche energy, single pulse EAS 3.5 mJ IC = 1.5 A, VCC = 50 V, RGE = 25 Ω L = 3.3 mH, Tj = 25 °C Power dissipation Ptot 50 W -55 ... + 150 -55 ... + 150 °C TC = 25 °C Chip or operating temperature Storage temperature Tj Tstg Semiconductor Group 1 Dec-06-1995 BUP 200 Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance IGBT thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit - RthJC ≤ 3.1 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.8 3.8 4 1 0.1 6.5 3.3 4.3 4.5 V VGE = VCE, IC = 0.1 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 1.5 A, Tj = 25 °C VGE = 15 V, IC = 1.5 A, Tj = 125 °C VGE = 15 V, IC = 1.5 A, Tj = 150 °C Zero gate voltage collector current ICES 25 100 µA VCE = 1000 V, VGE = 0 V, Tj = 2...