BUL76A

LAB MECHANICAL DATA Dimensions in mm 10.2 1.3 4.5 SEME BUL76A ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications 6.3 3.6 Dia. 15.1 18.0 1 2 3 1.3 14.0 0.85 0.5 SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE HIGH CURRENT EFFICIENT POWER SWITCHING FEATURES Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. Ion implant and high accuracy masking for tight control of characteristics from batch to batch. Triple Guard Rings for improved control of high voltages. 2.54 2.54 TO-220 Pin 1 - Base Pin 2 - Collector Pin 3 - Emitter ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC IB Ptot Tj Tstg Semelab plc. Collector – Base Voltage(IE=0) Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Continuous Collector Current Base Current Total Dissipation at Tcase = 25°C Junction Temperature Operating and Storage Temperature Range Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. 350V 160V 10V 60A 12A 85W 150°C –55 to +150°C Prelim. 2/97 LAB ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter VCEO(sus) V(BR)CBO V(BR)EBO ICBO ICEO IEBO SEME BUL76A Test Conditions Min. 160 350 10 Typ. Max. Unit ELECTRICAL CHARACTERISTICS Collector – Emitter Sustaining Voltage IC = 100mA Collector – Base ...