BUK9515-100A

TO-220AB BUK9515-100A N-channel TrenchMOS logic level FET Rev. 3 — 19 April 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ AEC Q101 compliant „ Low conduction losses due to low on-state resistance 1.3 Applications „ Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Ptot total power dissipation Tj junction temperature Static characteristics RDSon drain-source on-state resistance Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C VGS = 10 V; ID = 25 A; Tj = 25 °C VGS = 5 V; ID = 25 A; Tj = 25 °C ID = 35 A; Vsup ≤ 25 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped Min Typ Max Unit - - 100 V - - 75 A - - 230 W -55 - 175 °C - 11.5 14.4 mΩ - 12 15 mΩ - - 120 mJ NXP Semiconductors 2. Pinning information Table 2. Pin 1 2 3 mb Pinning information Symbol Description G gate D drain S source D mounting base; connected to drain BUK9515-100A N-channel TrenchMOS logic level FET Simplified outline mb Graphic symbol D G mbb076 S 3. Ordering information 123 SOT78A (TO-220AB) Table 3. Ordering...