TO-220AB
BUK9515-100A
N-channel TrenchMOS logic level FET
Rev. 3 — 19 April 2011
Product data sheet
1. Product profil...
TO-220AB
BUK9515-100A
N-channel TrenchMOS logic level FET
Rev. 3 — 19 April 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low on-state resistance
1.3 Applications
Automotive and general purpose power switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VDS drain-source voltage ID drain current Ptot total power dissipation Tj junction temperature Static characteristics
RDSon
drain-source on-state resistance
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source avalanche energy
Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C
VGS = 10 V; ID = 25 A; Tj = 25 °C VGS = 5 V; ID = 25 A; Tj = 25 °C
ID = 35 A; Vsup ≤ 25 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped
Min Typ Max Unit
- - 100 V
- - 75 A
- - 230 W
-55 -
175 °C
- 11.5 14.4 mΩ - 12 15 mΩ
- - 120 mJ
NXP Semiconductors
2. Pinning information
Table 2. Pin 1 2 3 mb
Pinning information Symbol Description G gate D drain S source D mounting base;
connected to drain
BUK9515-100A
N-channel TrenchMOS logic level FET
Simplified outline
mb
Graphic symbol
D
G mbb076 S
3. Ordering information
123
SOT78A (TO-220AB)
Table 3. Ordering...