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BUK7515-100A Dataheets PDF



Part Number BUK7515-100A
Manufacturers NXP
Logo NXP
Description TrenchMOS transistor Standard level FET
Datasheet BUK7515-100A DatasheetBUK7515-100A Datasheet (PDF)

Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology which features very low on-state resistance. It is intended for use in automotive and general purpose switching applications. BUK7515-100A QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Juncti.

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Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology which features very low on-state resistance. It is intended for use in automotive and general purpose switching applications. BUK7515-100A QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX. 100 75 230 175 15 UNIT V A W ˚C mΩ PINNING - TO220AB PIN 1 2 3 tab gate drain DESCRIPTION PIN CONFIGURATION tab SYMBOL d g source drain 1 23 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ID ID IDM Ptot Tstg, Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature CONDITIONS RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 100 100 20 75 53 240 230 175 UNIT V V V A A A W ˚C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS in free air TYP. 60 MAX. 0.65 UNIT K/W K/W December 1998 1 Rev 1.100 Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET STATIC CHARACTERISTICS Tj= 25˚C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IGSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance CONDITIONS VGS = 0 V; ID = 0.25 mA; Tj = -55˚C VDS = VGS; ID = 1 mA Tj = 175˚C Tj = -55˚C VDS = 100 V; VGS = 0 V; VGS = ±20 V; VDS = 0 V VGS = 10 V; ID = 25 A Tj = 175˚C Tj = 175˚C MIN. 100 89 2 1 - BUK7515-100A TYP. 3.0 0.05 2 12.0 - MAX. 4.0 4.4 10 500 100 15.0 40.5 UNIT V V V V V µA µA nA mΩ mΩ DYNAMIC CHARACTERISTICS Tmb = 25˚C unless otherwise specified SYMBOL Ciss Coss Crss td on tr td off tf Ld Ld Ls PARAMETER Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal drain inductance Internal source inductance CONDITIONS VGS = 0 V; VDS = 25 V; f = 1 MHz MIN. TYP. 4500 550 305 35 85 150 70 3.5 4.5 7.5 MAX. 6000 660 400 55 125 225 100 UNIT pF pF pF ns ns ns ns nH nH nH VDD = 30 V; Rload =1.2Ω; VGS = 10 V; RG = 10 Ω Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tj = 25˚C unless otherwise specified SYMBOL IDR IDRM VSD trr Qrr PARAMETER Continuous reverse drain current Pulsed reverse drain current Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS MIN. IF = 25 A; VGS = 0 V IF = 75 A; VGS = 0 V IF = 75 A; -dIF/dt = 100 A/µs; VGS = -10 V; VR = 30 V TYP. 0.85 1.1 80 0.35 MAX. 75 240 1.2 UNIT A A V V ns µC AVALANCHE LIMITING VALUE SYMBOL WDSS PARAMETER Drain-source non-repetitive unclamped inductive turn-off energy CONDITIONS ID = 35 A; VDD ≤ 25 V; VGS = 10 V; RGS = 50 Ω; Tmb = 25 ˚C MIN. TYP. MAX. 120 UNIT mJ December 1998 2 Rev 1.100 Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET BUK7515-100A 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% Normalised Power Derating 1 D= 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0 Zth / (K/W) P D tp D= tp T t T 0 20 40 60 80 100 Tmb / C 120 140 160 180 0.001 0.00001 0.001 t/S 0.1 10 Fig.1. Normalised power dissipation. PD% = 100⋅PD/PD 25 ˚C = f(Tmb) ID% Normalised Current Derating Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T 300 ID/A 250 VGS\V = 120 110 100 90 80 70 60 50 40 30 20 10 0 20.0 10.0 9.0 8.0 7.5 7.0 6.5 6.0 5.5 5.0 4.5 200 150 100 50 0 20 40 60 80 100 Tmb / C 120 140 160 180 0 0 2 4 VDS/V 6 8 10 Fig.2. Normalised continuous drain current. ID% = 100⋅ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 5 V 1000 ID/A RDS(ON) = VDS/ID 100 Fig.5. Typical output characteristics, Tj = 25 ˚C. ID = f(VDS); parameter VGS RDS(ON)/mOhm 20 tp = 1uS 100uS 1mS 19 18 17 VGS/V = 16 15 10 DC 10mS 100mS 14 13 12 5.5 6.0 6.5 7.0 8.0 10.0 0 20 40 ID/A 60 80 100 1 1 10 VDS/V 100 11 Fig.3. Safe operating area. Tmb = 25 ˚C ID & IDM = f(VDS); IDM single pulse; parameter tp Fig.6. Typical on-state resistance, Tj = 25 ˚C. RDS(ON) = f(ID); parameter VGS December 1998 3 Rev 1.100 Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET BUK7515-100A 16 RDS(ON)/mOhm 3 a Rds(on) normalised to 25degC 15 2.5 14 2 13 1.5 12 1 11 0.5 -100 -50 0 50 100 Tmb / degC 150 200 10 5 10 VGS/V 15 20 Fig.


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