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BUK582-100A

NXP
Part Number BUK582-100A
Manufacturer NXP
Description PowerMOS transistor Logic level FET
Published Mar 23, 2005
Detailed Description Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhance...
Datasheet PDF File BUK582-100A PDF File

BUK582-100A
BUK582-100A

Overview
Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications.
The device is intended for use in automotive and general purpose switching applications.
BUK582-100A QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 5 V MAX.
100 1.
7 1.
8 150 0.
31 UNIT V A W ˚C Ω PINNING - SOT223 PIN 1 2 3 4 gate drain source drain (tab) DESCRIPTION PIN CONFIGURATION 4 SYMBOL d g 1 2 3 s LIMITING VA...


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