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BUK581-100A Dataheets PDF



Part Number BUK581-100A
Manufacturers NXP
Logo NXP
Description PowerMOS transistor Logic level FET
Datasheet BUK581-100A DatasheetBUK581-100A Datasheet (PDF)

Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose switching applications. BUK581-100A QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-.

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Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose switching applications. BUK581-100A QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 5 V MAX. 100 0.9 1.5 150 0.90 UNIT V A W ˚C Ω PINNING - SOT223 PIN 1 2 3 4 gate drain source drain (tab) DESCRIPTION PIN CONFIGURATION 4 SYMBOL d g 1 2 3 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ID ID IDM Ptot Tstg Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction Temperature CONDITIONS RGS = 20 kΩ Tamb = 25 ˚C Tamb = 100 ˚C Tamb = 25 ˚C Tamb = 25 ˚C MIN. - 55 MAX. 100 100 15 0.9 0.6 3.6 1.5 150 150 UNIT V V V A A A W ˚C ˚C THERMAL RESISTANCES SYMBOL Rth j-b Rth j-amb PARAMETER From junction to board From junction to ambient 1 CONDITIONS Mounted on any PCB Mounted on PCB of Fig.17 MIN. - TYP. 50 - MAX. 85 UNIT K/W K/W 1 Temperature measured 1-3 mm from tab. January 1998 1 Rev 1.000 Philips Semiconductors Product Specification PowerMOS transistor Logic level FET STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IDSS IGSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance CONDITIONS VGS = 0 V; ID = 0.25 mA VDS = VGS; ID = 0.1 mA VDS = 100 V; VGS = 0 V; VDS = 100 V; VGS = 0 V; Tj = 125 ˚C VGS = ±15 V; VDS = 0 V VGS = 5 V; ID = 0.9 A MIN. 100 1.0 - BUK581-100A TYP. 1.5 1 0.1 10 0.51 MAX. 2.0 10 1.0 100 0.90 UNIT V V µA mA nA Ω DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise specified SYMBOL gfs Ciss Coss Crss td on tr td off tf PARAMETER Forward transconductance Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time CONDITIONS VDS = 25 V; ID = 0.9 A VGS = 0 V; VDS = 25 V; f = 1 MHz VDD = 30 V; ID = 3 A; VGS = 5 V; RGS = 50 Ω; Rgen = 50 Ω MIN. 1 TYP. 1.8 180 45 16 6 45 15 20 MAX. 300 60 25 10 55 25 30 UNIT S pF pF pF ns ns ns ns REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tj = 25 ˚C unless otherwise specified SYMBOL IDR IDRM VSD trr Qrr PARAMETER Continuous reverse drain current Pulsed reverse drain current Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS IF = 0.9 A; VGS = 0 V IF = 0.9 A; -dIF/dt = 100 A/µs; VGS = -10 V; VR = 30 V MIN. TYP. 0.85 40 100 MAX. 0.9 3.6 1.1 UNIT A A V ns nC AVALANCHE LIMITING VALUE SYMBOL WDSS PARAMETER Drain-source non-repetitive unclamped inductive turn-off energy CONDITIONS ID = 0.9 A; VDD ≤ 25 V; VGS = 5 V; RGS = 50 Ω; Tamb = 25 ˚C MIN. TYP. MAX. 10 UNIT mJ January 1998 2 Rev 1.000 Philips Semiconductors Product Specification PowerMOS transistor Logic level FET BUK581-100A 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% Normalised Power Derating 10 ID / A S/ ID BUK581-100A 1 RD S N (O )= VD tp = 100 us 1 ms 10 ms 0.1 DC 100 ms 1s 10 s 0.01 0 20 40 60 80 Tamb / C 100 120 140 1 10 VDS / V 100 Fig.1. Normalised power dissipation. PD% = 100⋅PD/PD 25 ˚C = f(Tamb) ID% Normalised Current Derating Fig.4. Safe operating area Tamb = 25 ˚C ID & IDM = f(VDS); IDM single pulse; parameter tp BUK581-100A 10 4.5 5 120 110 100 90 80 70 60 50 40 30 20 10 0 5 ID / A 4 4 3 3.5 2 3 1 VGS / V = 2.5 0 20 40 60 80 Tamb / C 100 120 140 0 0 2 4 VDS / V 6 8 10 Fig.2. Normalised continuous drain current. ID% = 100⋅ID/ID 25 ˚C = f(Tamb); conditions: VGS ≥ 5 V Fig.5. Typical output characteristics, Tj = 25 ˚C. ID = f(VDS); parameter VGS RDS(ON) / Ohm 2.5 3 3.5 BUK581-100A 4 1E+02 Zth j-amb / (K/W) D= 0.5 0.2 0.1 0.05 0.02 BUKX81 2 1.8 1.6 1.4 1.2 1 1E+01 1E+00 P D tp D= tp T 4.5 5 VGS / V = 10 0.8 0.6 1E-01 T t 0.4 0.2 0 1E-05 1E-03 t/s 1E-01 1E+01 1E+03 1E-02 1E-07 0 1 2 ID / A 3 4 5 Fig.3. Transient thermal impedance. Zth j-amb = f(t); parameter D = tp/T Fig.6. Typical on-state resistance, Tj = 25 ˚C. RDS(ON) = f(ID); parameter VGS January 1998 3 Rev 1.000 Philips Semiconductors Product Specification PowerMOS transistor Logic level FET BUK581-100A 5 ID / A BUK581-100A Tj / C = 25 VGS(TO) / V max. 2 4 150 typ. 3 min. 1 2 1 0 0 1 2 VGS / V 3 4 5 0 -60 -40 -20 0 20 40 60 Tj / C 80 100 120 140 Fig.7. Typical transfer characteristics. ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj gfs / S BUK581-100A Fig.10. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 0.1 mA; VDS =.


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