Document
Philips Semiconductors
Product specification
PowerMOS transistor Isolated version of BUK455-60A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications.
BUK475-60A/B
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK475 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX. -60A 60 21 30 150 0.038 MAX. -60B 60 20 30 150 0.045 UNIT V A W ˚C Ω
PINNING - SOT186A
PIN 1 2 3 gate drain source DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
d
g
case isolated
1 2 3
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ID ID IDM Ptot Tstg Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction temperature CONDITIONS RGS = 20 kΩ Ths = 25 ˚C Ths = 100 ˚C Ths = 25 ˚C Ths = 25 ˚C MIN. - 55 -60A 21 13 84 30 150 150 MAX. 60 60 30 -60B 20 12.6 80 UNIT V V V A A A W ˚C ˚C
THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS with heatsink compound MIN. TYP. 55 MAX. 4.17 UNIT K/W K/W
November 1996
1
Rev 1.200
Philips Semiconductors
Product specification
PowerMOS transistor
BUK475-60A/B
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IDSS IGSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance CONDITIONS VGS = 0 V; ID = 0.25 mA VDS = VGS; ID = 1 mA VDS = 60 V; VGS = 0 V; Tj = 25 ˚C VDS = 60 V; VGS = 0 V; Tj =125 ˚C VGS = ±30 V; VDS = 0 V VGS = 10 V; BUK475-60A BUK475-60B ID = 20 A MIN. 60 2.1 TYP. 3.0 1 0.1 10 0.03 0.04 MAX. 4.0 10 1.0 100 0.038 0.045 UNIT V V µA mA nA Ω Ω
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified SYMBOL gfs Ciss Coss Crss td on tr td off tf Ld Ls PARAMETER Forward transconductance Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal source inductance CONDITIONS VDS = 25 V; ID = 20 A VGS = 0 V; VDS = 25 V; f = 1 MHz VDD = 30 V; ID = 3 A; VGS = 10 V; RGS = 50 Ω; Rgen = 50 Ω Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad MIN. 8 TYP. 13.5 1650 560 300 25 60 125 100 4.5 7.5 MAX. 2000 750 400 40 90 160 130 UNIT S pF pF pF ns ns ns ns nH nH
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified SYMBOL Visol PARAMETER R.M.S. isolation voltage from all three terminals to external heatsink CONDITIONS f = 50-60 Hz; sinusoidal waveform; R.H. ≤ 65% ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V
Cisol
Capacitance from T2 to external f = 1 MHz heatsink
-
10
-
pF
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified SYMBOL IDR IDRM VSD trr Qrr PARAMETER Continuous reverse drain current Pulsed reverse drain current Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS IF = 21 A ; VGS = 0 V IF = 21 A; -dIF/dt = 100 A/µs; VGS = 0 V; VR = 30 V MIN. TYP. 1.4 60 0.25 MAX. 21 84 1.8 UNIT A A V ns µC
November 1996
2
Rev 1.200
Philips Semiconductors
Product specification
PowerMOS transistor
BUK475-60A/B
AVALANCHE LIMITING VALUE
Ths = 25 ˚C unless otherwise specified SYMBOL WDSS PARAMETER Drain-source non-repetitive unclamped inductive turn-off energy CONDITIONS ID = 41 A ; VDD ≤ 25 V ; VGS = 10 V ; RGS = 50 Ω MIN. TYP. MAX. 100 UNIT mJ
120 110 100 90 80 70 60 50 40 30 20 10 0
PD%
Normalised Power Derating
with heatsink compound
1000
ID / A
BUK445-60
100
S RD ( ) ON =
VD
S/
ID
A B tp = 10 us 100 us 1 ms 10 ms 100 ms
10
DC 1
0
20
40
60
80 Ths / C
100
120
140
0.1 0.1 1 10 VDS / V 100 1000
Fig.1. Normalised power dissipation. PD% = 100⋅PD/PD 25 ˚C = f(Ths)
ID% Normalised Current Derating
with heatsink compound
Fig.3. Safe operating area. Ths = 25 ˚C ID & IDM = f(VDS); IDM single pulse; parameter tp
Zth / (K/W) D= 0.5 1 0.2 0.1 0.05 0.02 BUKx45-lv
120 110 100 90 80 70 60 50 40 30 20 10 0
10
0.1
0.01
0
P D
tp
D=
tp T t 1E+01
0
20
40
60
80 Ths / C
100
120
140
0.001 1E-07
T 1E-05 1E-03 t/s 1E-01
Fig.2. Normalised continuous drain current. ID% = 100⋅ID/ID 25 ˚C = f(Ths); conditions: VGS ≥ 10 V
Fig.4. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T
November 1996
3
Rev 1.200
Philips Semiconductors
Product specification
PowerMOS transistor
BUK475-60A/B
80 70 60 50 40.