Document
Philips Semiconductors
Product specification
PowerMOS transistor Isolated version of BUK453-100A/B
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.
BUK473-100A/B
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot RDS(ON) PARAMETER BUK473 Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance MAX. -100A 100 9 25 0.16 MAX. -100B 100 8 25 0.2 UNIT V A W Ω
PINNING - SOT186A
PIN 1 2 3 gate drain source DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
d
g
case isolated
1 2 3
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ID ID IDM Ptot Tstg Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction temperature CONDITIONS RGS = 20 kΩ Ths = 25 ˚C Ths = 100 ˚C Ths = 25 ˚C Ths = 25 ˚C MIN. - 55 -100A 9 5.7 36 25 150 150 MAX. 100 100 30 -100B 8 5 32 UNIT V V V A A A W ˚C ˚C
THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS with heatsink compound MIN. TYP. 55 MAX. 5 UNIT K/W K/W
November 1996
1
Rev 1.200
Philips Semiconductors
Product specification
PowerMOS transistor
BUK473-100A/B
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IDSS IGSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance CONDITIONS VGS = 0 V; ID = 0.25 mA VDS = VGS; ID = 1 mA VDS = 100 V; VGS = 0 V; Tj = 25 ˚C VDS = 100 V; VGS = 0 V; Tj =125 ˚C VGS = ±30 V; VDS = 0 V VGS = 10 V; BUK473-100A BUK473-100B ID = 5 A MIN. 100 2.1 TYP. 3.0 1 0.1 10 0.15 0.17 MAX. 4.0 10 1.0 100 0.16 0.2 UNIT V V µA mA nA Ω Ω
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified SYMBOL gfs Ciss Coss Crss td on tr td off tf Ld Ls PARAMETER Forward transconductance Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal source inductance CONDITIONS VDS = 25 V; ID = 5 A VGS = 0 V; VDS = 25 V; f = 1 MHz VDD = 30 V; ID = 2.9 A; VGS = 10 V; RGS = 50 Ω; Rgen = 50 Ω Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad MIN. 4.0 TYP. 5.5 660 140 60 10 25 60 40 4.5 7.5 MAX. 825 200 100 20 40 90 55 UNIT S pF pF pF ns ns ns ns nH nH
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified SYMBOL Visol PARAMETER R.M.S. isolation voltage from all three terminals to exte.