Document
Philips Semiconductors
Product specification
PowerMOS transistor
BUK466-100A
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX. 100 34 150 175 0.057 UNIT V A W ˚C Ω
PINNING - SOT404
PIN 1 2 3 mb gate drain source drain DESCRIPTION
PIN CONFIGURATION
mb
SYMBOL
d
g
2 1 3
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ID ID IDM Ptot Tstg Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction temperature CONDITIONS RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 100 100 30 34 24 136 150 175 175 UNIT V V V A A A W ˚C ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. minimum footprint, FR4 board (see Fig. 18). TYP. 50 MAX. 1.0 UNIT K/W K/W
February 1996
1
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
BUK466-100A
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IDSS IGSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance CONDITIONS VGS = 0 V; ID = 0.25 mA VDS = VGS; ID = 1 mA VDS = 100 V; VGS = 0 V; Tj = 25 ˚C VDS = 100 V; VGS = 0 V; Tj =125 ˚C VGS = ±30 V; VDS = 0 V VGS = 10 V; ID = 15 A MIN. 100 2.1 TYP. 3.0 1 0.1 10 0.052 MAX. 4.0 10 1.0 100 0.057 UNIT V V µA mA nA Ω
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified SYMBOL gfs Ciss Coss Crss td on tr td off tf Ld Ld Ls PARAMETER Forward transconductance Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal drain inductance Internal source inductance CONDITIONS VDS = 25 V; ID = 15 A VGS = 0 V; VDS = 25 V; f = 1 MHz VDD = 30 V; ID = 3 A; VGS = 10 V; Rgen = 50 Ω; RGS = 50 Ω Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad MIN. 12 TYP. 16 1500 450 130 20 40 150 65 3.5 4.5 7.5 MAX. 2000 600 200 30 60 200 85 UNIT S pF pF pF ns ns ns ns nH nH nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified SYMBOL IDR IDRM VSD trr Qrr PARAMETER Continuous reverse drain current Pulsed reverse drain current Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS IF = 34 A ; VGS = 0 V IF = 34 A; -dIF/dt = 100 A/µs; VGS = 0 V; VR = 30 V MIN. TYP. 1.8 100 1.0 MAX. 34 136 2.5 UNIT A A V ns µC
February 1996
2
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
BUK466-100A
120 110 100 90 80 70 60 50 40 30 20 10 0
PD%
Normalised Power Derating
10
Zth j-mb / (K/W)
BUKx56-lv
1
D= 0.5
0.1
0.2 0.1 0.05 0.02 P D 0 tp tp T t 1E+01
0.01
D=
0
20
40
60
80 100 Tmb / C
120
140
160
180
0.001 1E-05 1E-03 t/s
T 1E-01
Fig.1. Normalised power dissipation. PD% = 100⋅PD/PD 25 ˚C = f(Tmb)
ID% Normalised Current Derating
Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T
ID / A VGS / V = 15 20 10
120 110 100 90 80 70 60 50 40 30 20 10 0
70 60 50 40
BUK456-100A 8 7
6 30 20 5 10
0 20 40 60 80 100 Tmb / C 120 140 160 180
0
4 0 2 4 VDS / V 6 8 10
Fig.2. Normalised continuous drain current. ID% = 100⋅ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 10 V
ID / A BUK456-100A,B
Fig.5. Typical output characteristics, Tj = 25 ˚C. ID = f(VDS); parameter VGS
RDS(ON) / Ohm 4.5 5 5.5 6 6.5 7 BUK456-100A VGS / V = 7.5 8 10 0.1 20
1000
0.2
100
RD
S(
) ON
=
VD
ID S/
A tp = 10 us 100 us
10 DC
1 ms 10 ms 100 ms
1
0
1 10 VDS / V 100 1000
0
20
40 ID / A
60
80
Fig.3. Safe operating area. Tmb = 25 ˚C ID & IDM = f(VDS); IDM single pulse; parameter tp
Fig.6. Typical on-state resistance, Tj = 25 ˚C. RDS(ON) = f(ID); parameter VGS
February 1996
3
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
BUK466-100A
70 60 50 40 30 20
ID / A Tj / C = 25
BUK456-100A
4
VGS(TO) / V max.
150
typ. 3 min. 2
1
10 0
0
0
2
4 VGS / V
6
8
10
-60
-20
20
60 Tj / C
100
140
180
Fig.7. Typical transfer characteristics. ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj
Fig.10. Gate threshold voltage. VG.