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BUK466-100A Dataheets PDF



Part Number BUK466-100A
Manufacturers NXP
Logo NXP
Description PowerMOS transistor
Datasheet BUK466-100A DatasheetBUK466-100A Datasheet (PDF)

Philips Semiconductors Product specification PowerMOS transistor BUK466-100A GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total p.

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Philips Semiconductors Product specification PowerMOS transistor BUK466-100A GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX. 100 34 150 175 0.057 UNIT V A W ˚C Ω PINNING - SOT404 PIN 1 2 3 mb gate drain source drain DESCRIPTION PIN CONFIGURATION mb SYMBOL d g 2 1 3 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ID ID IDM Ptot Tstg Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction temperature CONDITIONS RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 100 100 30 34 24 136 150 175 175 UNIT V V V A A A W ˚C ˚C THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. minimum footprint, FR4 board (see Fig. 18). TYP. 50 MAX. 1.0 UNIT K/W K/W February 1996 1 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistor BUK466-100A STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IDSS IGSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance CONDITIONS VGS = 0 V; ID = 0.25 mA VDS = VGS; ID = 1 mA VDS = 100 V; VGS = 0 V; Tj = 25 ˚C VDS = 100 V; VGS = 0 V; Tj =125 ˚C VGS = ±30 V; VDS = 0 V VGS = 10 V; ID = 15 A MIN. 100 2.1 TYP. 3.0 1 0.1 10 0.052 MAX. 4.0 10 1.0 100 0.057 UNIT V V µA mA nA Ω DYNAMIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL gfs Ciss Coss Crss td on tr td off tf Ld Ld Ls PARAMETER Forward transconductance Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal drain inductance Internal source inductance CONDITIONS VDS = 25 V; ID = 15 A VGS = 0 V; VDS = 25 V; f = 1 MHz VDD = 30 V; ID = 3 A; VGS = 10 V; Rgen = 50 Ω; RGS = 50 Ω Measured from contact screw on tab to centre of die Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad MIN. 12 TYP. 16 1500 450 130 20 40 150 65 3.5 4.5 7.5 MAX. 2000 600 200 30 60 200 85 UNIT S pF pF pF ns ns ns ns nH nH nH REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL IDR IDRM VSD trr Qrr PARAMETER Continuous reverse drain current Pulsed reverse drain current Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS IF = 34 A ; VGS = 0 V IF = 34 A; -dIF/dt = 100 A/µs; VGS = 0 V; VR = 30 V MIN. TYP. 1.8 100 1.0 MAX. 34 136 2.5 UNIT A A V ns µC February 1996 2 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistor BUK466-100A 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% Normalised Power Derating 10 Zth j-mb / (K/W) BUKx56-lv 1 D= 0.5 0.1 0.2 0.1 0.05 0.02 P D 0 tp tp T t 1E+01 0.01 D= 0 20 40 60 80 100 Tmb / C 120 140 160 180 0.001 1E-05 1E-03 t/s T 1E-01 Fig.1. Normalised power dissipation. PD% = 100⋅PD/PD 25 ˚C = f(Tmb) ID% Normalised Current Derating Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T ID / A VGS / V = 15 20 10 120 110 100 90 80 70 60 50 40 30 20 10 0 70 60 50 40 BUK456-100A 8 7 6 30 20 5 10 0 20 40 60 80 100 Tmb / C 120 140 160 180 0 4 0 2 4 VDS / V 6 8 10 Fig.2. Normalised continuous drain current. ID% = 100⋅ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 10 V ID / A BUK456-100A,B Fig.5. Typical output characteristics, Tj = 25 ˚C. ID = f(VDS); parameter VGS RDS(ON) / Ohm 4.5 5 5.5 6 6.5 7 BUK456-100A VGS / V = 7.5 8 10 0.1 20 1000 0.2 100 RD S( ) ON = VD ID S/ A tp = 10 us 100 us 10 DC 1 ms 10 ms 100 ms 1 0 1 10 VDS / V 100 1000 0 20 40 ID / A 60 80 Fig.3. Safe operating area. Tmb = 25 ˚C ID & IDM = f(VDS); IDM single pulse; parameter tp Fig.6. Typical on-state resistance, Tj = 25 ˚C. RDS(ON) = f(ID); parameter VGS February 1996 3 Rev 1.000 Philips Semiconductors Product specification PowerMOS transistor BUK466-100A 70 60 50 40 30 20 ID / A Tj / C = 25 BUK456-100A 4 VGS(TO) / V max. 150 typ. 3 min. 2 1 10 0 0 0 2 4 VGS / V 6 8 10 -60 -20 20 60 Tj / C 100 140 180 Fig.7. Typical transfer characteristics. ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj Fig.10. Gate threshold voltage. VG.


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