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BUK456-1000B

NXP
Part Number BUK456-1000B
Manufacturer NXP
Description PowerMOS transistor
Published Mar 23, 2005
Detailed Description Philips Semiconductors Product Specification PowerMOS transistor BUK456-1000B GENERAL DESCRIPTION N-channel enhancem...
Datasheet PDF File BUK456-1000B PDF File

BUK456-1000B
BUK456-1000B

Overview
Philips Semiconductors Product Specification PowerMOS transistor BUK456-1000B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope.
The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.
QUICK REFERENCE DATA SYMBOL VDS ID Ptot RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance MAX.
1000 3.
1 125 5 UNIT V A W Ω PINNING - TO220AB PIN 1 2 3 tab gate drain source drain DESCRIPTION PIN CONFIGURATION tab SYMBOL d g 1 23 s LIMITING VALUES Limiting values in accordanc...


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