Transient voltage suppressor diodes
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D168
BZG04 series Transient voltage suppressor diodes
Prelimi...
Description
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D168
BZG04 series Transient voltage suppressor diodes
Preliminary specification Supersedes data of 1996 Jun 10 1996 Sep 19
Philips Semiconductors
Preliminary specification
Transient voltage suppressor diodes
FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability UL 94V-O classified plastic package Transient suppressor stand-off voltage range: 8.2 to 220 V for 32 types Shipped in 12 mm embossed tape. DESCRIPTION DO-214AC surface mountable package with glass passivated chip.
BZG04 series
The well-defined void-free case is of a transfer-moulded thermo-setting plastic.
handbook, 4 columns
Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.
,, ,, ,,
k
cathode band a
Top view
Side view
MSA473
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PRSM PARAMETER non-repetitive peak reverse power dissipation storage temperature junction temperature CONDITIONS 10/1000 µs exponential pulse (see Fig.4); Tj = 25 °C prior to surge; see also Fig.2 MIN. − MAX. 300 UNIT W
Tstg Tj
−65 −65
+175 +175
°C °C
1996 Sep 19
2
Philips Semiconductors
Preliminary specification
Transient voltage suppressor diodes
ELECTRICAL CHARACTERISTICS Total series Tj = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage CONDITIONS IF = 0.5 A; see Fig.3 MIN. −
BZG04 series
MAX. 1.2 V
UNIT
Per type Tj = 25 °C unless otherwise...
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